Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.

In order to provide a technology capable of suppressing degradation of measurement accuracy ale to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portions 3a to 3d are displaced outward in a y-direction of a semiconductor substrate 2 by deformation of the semiconductor substrate 2. Since a movable body 5 is disposed in a state of floating above the semiconductor substrate 2, it is not affected and displaced by the deformation of the semiconductor substrate 2. Therefore, a tensile stress (+.sub.1) occurs in the beam 4a and a compressive stress (.sub.2) occurs in the beam 4b. At this time, in terms of a spring system made by combining the beam 4a and the beam 4b, increase in spring constant due to the tensile stress acting on the beam 4a and decrease in spring constant due to the compressive stress acting on the beam 4b are offset against each other.

A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The method also includes providing a second substrate having a second crystal orientation, forming at least one or more NMOS devices overlying the second substrate, and forming a second dielectric layer overlying the one or more NMOS devices. The method further includes coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

A coupling device (130) for coupling a plurality of vibration systems (110, 120), which are mounted above a substrate (200) in such a manner that said systems can vibrate along a first direction (x) and are offset with respect to one another in a second direction (y) perpendicular to the first direction (x), has a flexural beam spring (135) which can bend in the first direction (x) and can be connected to the vibration systems (110, 120); in this case, connections (112, 122) between the flexural beam springs (135) and the vibration systems (110, 120) are arranged between at least two connection points (140) of the flexural beam springs (135) to the substrate (200) in such a manner that a deflection of the flexural beam springs (135) which is caused by movements of the vibration systems (110, 120) results in a vibration of the flexural beam springs (135) with antinodes of vibration in the region of the connections (112, 122) between the flexural beam springs (135) and the vibration systems (110, 120).

A physical quantity sensor includes a substrate provided with a first fixed electrode, a movable body provided to be swingable with respect to the substrate about a rotation axis along a Y axis, and a stopper restricting rotation of the movable body. The movable body is provided with an elastic portion at a position overlapping the stopper in a plan view viewed from the Z axis direction. The first mass portion includes a first region, and a second region far from the rotation axis. A first gap distance of a first gap between the first mass portion and the first fixed electrode in the first region is smaller than a second gap distance of a second gap between the first mass portion and the first fixed electrode in the second region.

A semiconductor component includes: a silicon-based substrate; an oxide layer atop the silicon-based substrate; an electronic component based on polycrystalline silicon; a crystalline silicon layer atop the silicon-based substrate and atop lateral faces of the oxide layer; and a lid connected to the crystalline silicon layer. The lid is a glass-based lid, a quartz-based lid or a silicon-based lid.

A microelectromechanical sensor device has a detection structure, having: a substrate, with a top surface; an inertial mass, suspended above the top surface of the substrate and elastically coupled to a rotor anchor so as to perform an inertial movement relative to the substrate as a function of a quantity to be detected; and stator electrodes, integrally coupled to the substrate at respective stator anchors and capacitively coupled to the inertial mass so as to generate a differential capacitive variation in response to, and indicative of, the quantity to be detected. In particular, the inertial mass performs, as the inertial movement, a translation movement along a vertical axis orthogonal to the top surface of the substrate; and the stator electrodes are arranged in a suspended manner above the top surface of the substrate.

A method for manufacturing a vibratory mechanical inertial sensor, sensor obtained by such a method and inertial unit including such a sensor The invention relates to a method for manufacturing a vibratory inertial sensor (1), comprising a step of associating a test body (3) with a base (2), a step of assembling a cover (100) to said base (2) to form a casing within which said test body (3) is housed, a step of vacuuming said casing or filling the latter with a dry gas, and a step of magnetically shielding said casing that includes a first operation of depositing, by galvanoplasty, a first layer of a first ferromagnetic material on part at least of said casing. Vibratory inertial sensors

A package structure that includes a pair of substrates arranged to oppose each other so as to form an internal space; a bonding portion sealing the pair of substrates; an element is sealed in the internal space and surrounded by the pair of substrates; an adsorption layer within the internal space and opposing at least one substrate of the pair of substrates, the adsorption layer constructed to adsorbs at least hydrogen; and a diffusion-inhibiting layer between the at least one substrate and the adsorption layer, and in which hydrogen is more difficult to diffuse compared with in the at least one substrate.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.