In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.

A method for producing a system, including a first microelectromechanical element and a second microelectromechanical element, including the following: providing, a substrate, having the first microelectromechanical element and the second microelectromechanical element, and a cap element, a getter material being situated on the substrate in a first region in a surrounding environment of the first microelectromechanical element and/or on the cap element in a first corresponding region; situating the cap element on the substrate using a wafer bonding technique so that a sealed first chamber is formed that contains the first microelectromechanical element and the first region and/or the first corresponding region, a sealed second chamber being formed that contains the second microelectromechanical element; producing an opening in the second chamber; and sealing the opening at a first ambient pressure, in particular a first gas pressure.

A microdevice (100) comprising a movable element (111) capable of moving relative to a fixed part (115), produced in first and second layers of material (104, 106) arranged one above the other such that the movable element comprises a portion (112) of the first layer and a portion (118) of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure (121) formed in the first and/or second layer of material.

The invention discloses a MEMS sensor detection device and a MEMS sensor system, wherein the MEMS sensor detection device comprises: a readout circuit used for analog signal processing of the output signal of the MEMS sensor to generate detection voltage; a cancellation voltage generation circuit used for generating a gravity cancellation voltage according to the detection voltage, wherein the gravity cancellation voltage and the gravity acceleration are in a positive proportional relationship; a selection circuit used for selecting the detection voltage output in a feedback phase and selecting the gravity cancellation voltage output in a gravity cancellation phase, wherein in one detection period, the feedback phase is located after the gravity cancellation phase; and a feedback circuit used for generating a feedback voltage according to the output voltage of the selection circuit, wherein the feedback voltage is in a positive proportional relationship with the output voltage of the selection circuit. The MEMS sensor detection device and the MEMS sensor system disclosed by the invention can cancel the influence of gravity acceleration and improve the sensitivity of the MEMS sensor system.

Microelectromechanical sensor with an out-of-plane detection has a cross sensitivity in a first direction in the plane with a value of S.sub.T, the sensor comprising a support, a mass suspended from the support by beams stressed by bending, in such a way that the inertial mass is capable of moving with respect to the support about an axis of rotation contained in a plane of the sensor, a stress gauge suspended between the mass and the support. The bending beams have a dimension t.sub.f in the out-of-plane direction and the mass has a dimension t.sub.M in the out-of-plane direction such that $t_f=\frac{3}{4}\left(t_M-2l_{\mathrm{arm}}{S}_T\right).$
L.sub.arm is the distance between the centre of gravity of the mass and the centre of the bending beams projected onto the first direction.

A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.

MEMS-based sensors can experience undesirable signal frequencies caused by vibrations, shocks, and accelerations, among other phenomena. A microisolation system can isolate individual MEMS-based sensors from undesirable signal frequencies and shocks. An embodiment of a system for microisolation of a MEMS-based sensor can include an isolation platform connected to one or more folded springs. Another embodiment of a system for microisolation can include an isolation platform and/or a frame connected to a mesh damping mechanism. In at least one embodiment, a mesh damping mechanism can be a microfibrous metal mesh damper. In one or more embodiments, a system for microisolation can include an isolation platform connected to one or more L-shaped springs, and a thickness of the one or more L-shaped springs can be less than a thickness of the isolation platform.

A micromechanical z-inertial sensor having a movable MEMS structure developed in a second function layer; first spring elements developed in a first function layer, and a first electrode developed in the first function layer, the first spring elements being connected to the movable MEMS structure and to a substrate, and the first function layer being situated below the second function layer; second spring elements developed in a third function layer, and a second electrode developed in the third function layer, the second spring elements being connected to the movable MEMS structure and to the substrate, and the third function layer being disposed above the second function layer; the movable MEMS structure being deflectable in the z-direction with the aid of the spring elements, and in a defined manner, not being deflectable in the x- and y-directions.

A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.

An inertial sensor includes: a substrate; a moving element swinging about a swing axis along a Y-axis; a detection electrode provided at the substrate, overlapping the moving element as viewed in a plan view from a Z-axis direction orthogonal to the Y-axis, and forming an electrostatic capacitance with the moving element; an exposure part provided at an inner side of the detection electrode and exposing a surface facing the moving element, of the substrate; a protrusion overlapping the moving element as viewed in a plan view from the Z-axis direction and protruding toward the moving element from the exposure part of the substrate; and a covered electrode provided at a top of the protrusion and having a same electric potential as the moving element.