B81B2203/0392

Nanochannel device with three dimensional gradient by single step etching for molecular detection

A technique includes forming a gradient channel with width and depth gradients. A mask is disposed on top of a substrate. The mask is patterned with at least one elongated channel pattern having different elongated channel pattern widths. A channel is etched in the substrate in a single etching step, the channel having a width gradient and a corresponding depth gradient both simultaneously etched in the single etching step according to the different elongated channel pattern widths in the mask.

Manufacturing method for semiconductor structure

A manufacturing method for a semiconductor structure is disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

Semiconductor structure and method for forming the same

A semiconductor structure includes a substrate, a MEMS substrate, a dielectric structure between the substrate and the MEMS substrate, a cavity in the dielectric structure, an electrode over the substrate, and a protrusion disposed in the cavity. The MEMS substrate includes a movable membrane, and the cavity is sealed by the movable membrane. A height of the protrusion is less than a depth of the cavity.

Combined-blade open flow path device and joined body thereof

A combined-blade open flow path device is a fluid flow path device where flow paths are adjacent to each other. The combined-blade open flow path device comprises a substrate configured to constitute a bottom portion of the flow paths; and blades erected on a surface of the substrate, the blades being configured to constitute side walls of the flow paths, wherein the blades are erected in groups, each of the groups extending from an upstream side to a downstream side in a flow direction of a fluid with a space between each of the blades in the flow direction of the fluid in each of the groups for making conduction of the fluid between the adjacent flow paths possible, and wherein one end of one of the flow paths is configured to be in contact with the fluid and is configured to make a flow of the fluid possible.

NANOTEXTURED MATERIALS

A material with nanopillar structures extending from a substrate. The nanopillars are engageable by organisms to cause an interaction, such as cellular destruction.

NANOTEXTURED MATERIALS

A material with nanopillar structures extending from a substrate. The nanopillars are engageable by organisms to cause an interaction, such as cellular destruction.

MEMS grid for manipulating structural parameters of MEMS devices

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE
20190016591 · 2019-01-17 ·

A manufacturing method for a semiconductor structure is disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
20240286889 · 2024-08-29 ·

A method for forming a semiconductor structure includes following operations. An interconnect structure is formed over a substrate. The interconnect structure includes a top conductive layer. A dielectric structure is formed over the interconnect structure. The dielectric structure is patterned to simultaneously form a cavity and a protrusion in the cavity. A MEMS substrate is bonded to the dielectric structure to seal the cavity. The protrusion is separated from the MEMS substrate.

MICROELECTROMECHANICAL COMPONENT
20180334381 · 2018-11-22 ·

A microelectromechanical component including, vertically at a distance from one another, a substrate device, a first, a second, and a third functional layer, a vertical stop being formed between the second and third functional layer, the vertical stop having a stop area on a surface of the second functional layer facing the third functional layer, wherein the second functional layer is connected to the first functional layer in a connecting area allocated to the stop area.