A ring-like sealing frame (3) and a bump (4) are simultaneously formed on a main surface of a first substrate (1) by patterning a metal paste. A ring-like protrusion (8) having a smaller width than a width of the sealing frame (3) is formed on a main surface of a second substrate (5). The main surface of the first substrate (1) and the main surface of the second substrate (5) are aligned to face each other. The sealing flame (3) is bonded to the protrusion (8), and the bump (4) is electrically bonded to the second substrate (5). A height of the protrusion (8) is 0.4 to 0.7 times a distance between the first substrate (1) and the second substrate (2) after bonding.

An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

An integrated MEMS electronic circuit that comprises a circuit wafer; a micromechanical structure being attached to a first surface of the circuit wafer and electrically coupled to an integrated circuit formed under said first surface. A capping chip having side surfaces substantially perpendicular to its main surfaces comprises a recess and is bonded to the first surface of the circuit wafer such that said micromechanical structure is enclosed in a cavity comprising the recess in the capping chip. Both the circuit wafer and the capping wafer can be further thinned while exposing at least one connection pad on the first surface of the circuit wafer that is not covered by the capping chip and that is coupled electrically to the integrated circuit.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

A wiring-buried glass substrate includes a glass substrate and a first wiring. The glass substrate includes a first surface, a second surface perpendicular to the first surface, and a third surface facing the first surface. The first wiring includes a first pillar portion and a first beam portion. The first pillar portion extends in a first direction perpendicular to the first surface of the glass substrate. The first beam portion is connected to a first surface of the first pillar portion and extends to a second direction perpendicular to a second surface of the glass substrate. The first wiring is buried in the glass substrate. The first surface of the first beam portion is exposed from a third surface of the glass substrate.

A device for suppressing stray radiation includes a MEMS sensor module and a conductive cage structure. The conductive cage structure may enclose the MEMS sensor module in order to suppress penetration of stray electromagnetic radiation with a stray wavelength .sub.o into the conductive cage structure, and the conductive cage structure may be arranged to be thermally insulated from the MEMS sensor module. The device may also include a connecting line. The connecting line may be connected to the MEMS sensor module and fed through the conductive cage structure by a capacitive element.

A microelectromechanical sensors (MEMS) device includes a first substrate, a MEMS transducer package attached on the first substrate and including a MEMS transducer therein configured to output an electrical signal corresponding to movement of fluid, and a semiconductor device attached on the first substrate and configured to process the electrical signal provided from the MEMS transducer.

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

Embodiments of the application provide a MEMS chip and an electrical packaging method for a MEMS chip. The MEMS chip includes a MEMS device layer, a first isolating layer located under the MEMS device layer, and a first conducting layer located under the first isolating layer. At the first isolating layer, there are a corresponding quantity of first conductive through holes in locations corresponding to conductive structures in a first region and in locations corresponding to electrodes in a second region. At the first conducting layer, there are M electrodes spaced apart from one another, and the M electrodes are respectively connected to M of the first conductive through holes. At the first conducting layer, electrodes in locations corresponding to at least some of the conductive structures in the first region are electrically connected in a one-to-one correspondence to electrodes in locations corresponding to at least some of the electrodes in the second region.