A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.

The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

The present invention relates to an electronic system comprising an electronic system comprising an electromechanical microsystem and a hermetic box encapsulating said microsystem. The box includes a fastening plane. The electromechanical microsystem includes a sensitive part and at least two beams connecting the sensitive part to the fastening plane.

The beams are thermally coupled to the sensitive part and are electrically coupled to one another. The system further includes a thermal regulator of the electromechanical microsystem including an electrical circuit including at least two ends connected to the beams, and a circuit controller able to generate an electrical current in the electrical circuit to modify the temperature of the sensitive part.

A method of manufacturing a semiconductor structure includes receiving a first substrate including a first dielectric layer disposed over the first substrate and a first conductive structure surrounded by the first dielectric layer; receiving a second substrate including a second dielectric layer disposed over the second substrate and a second conductive structure surrounded by the second dielectric layer; bonding the first dielectric layer with the second dielectric layer; and bonding the first conductive structure with the second conductive structure.

An optical micro-electromechanical system (MEMS) system is disclosed. The optical MEMS system includes a printed circuit board (PCB), and a MEMS optical integrated circuit (IC) package mounted to the PCB. The IC package includes a MEMS optical die, and a plurality of leads electrically and mechanically connected to the MEMS optical die and to the PCB. The optical MEMS system also includes one or more elastomeric grommets contacting one or more of the leads, where the grommets are configured to absorb mechanical vibration energy from the contacted leads.

A surface mount package for a micro-electro-mechanical system (MEMS) microphone die is disclosed. The surface mount package features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The surface mount microphone package has a cover, and the MEMS microphone die is substrate-mounted and acoustically coupled to an acoustic port provided in the surface mount package. The substrate and the cover are joined together to form the MEMS microphone, and the substrate and cover cooperate to form an acoustic chamber for the substrate-mounted MEMS microphone die.

A surface mount package for a micro-electro-mechanical system (MEMS) microphone die is disclosed. The surface mount package features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The surface mount microphone package has a cover, and the MEMS microphone die is substrate-mounted and acoustically coupled to an acoustic port provided in the surface mount package. The substrate and the cover are joined together to form the MEMS microphone, and the substrate and cover cooperate to form an acoustic chamber for the substrate-mounted MEMS microphone die.

A package substrate is provided which comprises: one or more first conductive contacts on a first surface; one or more second conductive contacts on a second surface opposite the first surface; a dielectric layer between the first and the second surfaces; and an embedded sensing or actuating element on the dielectric layer conductively coupled with one of the first conductive contacts, wherein the embedded sensing or actuating element comprises a fixed metal layer in the dielectric layer and a flexible metal layer suspended over the fixed metal layer by one or more metal supports on the dielectric layer. Other embodiments are also disclosed and claimed.

A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.

An acceleration sensor includes: a sensor section having a cap section; a sensing section including movable and fixed electrodes and movable and fixed electrode connecting sections; a peripheral section. The cap section includes a movable electrode through-hole electrode in a movable electrode through hole and a fixed electrode through-hole electrode in a fixed electrode through hole. The cap section further includes a movable electrode pad connected to the movable electrode through-hole electrode and a circuit device and a fixed electrode pad connected to the fixed electrode through-hole electrode and the circuit device. The movable electrode pad and the fixed electrode pad are adjacent to each other in a region of the cap section overlapped with the peripheral section in the stacking direction.