There is provided an imaging device including: an imaging element provided with a photoelectric converter for each pixel, and having a light-receiving surface and a non-light-receiving surface opposed to the light-receiving surface; and an electric element including a support substrate and a floating section, the support substrate provided on side of the non-light-receiving surface of the imaging element and opposed to the imaging element, and the floating section provided between the support substrate and the imaging element, and disposed with a gap interposed between the floating section and each of the support substrate and the imaging element.

According to an example aspect of the present invention, there is provided a wafer level package (100) for a device, the package (100) comprising a first substrate (102) and a second substrate (103), at least one insulating stand-off structure (104) between the first substrate (102) and the second substrate (103), a bonding layer (108) on the at least one stand-off structure (104), and a first lateral electrical connection line (109) on a surface of the first substrate (102) and a second lateral electrical connection line (110) on a surface the second substrate (103), wherein electrical connection is formed between the first lateral electrical connection line (109) and the second lateral connection line (110) via the bonding layer (108) of the at least one stand-off structure (104).

A device including a first layer, a MEMS component and/or an ASIC component on the first layer, and a second layer having a cavity receiving the MEMS component and/or the ASIC component. The second layer has a feedthrough for transmission of at least one of an electrical signal, an electromagnetic signal, a fluid, and a force.

In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

A sensing device includes a lead frame, a first insulating film, a semiconductor integrated circuit chip provided over the lead frame via the first insulating film, and a first bonding wire via which an external derivation lead and the semiconductor integrated circuit chip are electrically coupled to each other. The sensing device includes a sensor chip disposed over the semiconductor integrated circuit chip such that a first surface of the sensor chip faces the semiconductor integrated circuit chip. The sensing device includes a sensor provided on a second surface of the sensor chip. The sensing device includes a molding resin with which the lead frame, the semiconductor integrated circuit chip, the sensor chip, and the first bonding wire are sealed. The sensor chip is electrically coupled to the semiconductor integrated circuit chip, and the molding resin has an opening in which the sensor is exposed.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

An inertial sensor includes a support substrate, a sensor main body supported by the support substrate, and a bonding member that is located between the support substrate and the sensor main body and bonds the sensor main body to the support substrate. The sensor main body includes a substrate bonded to the support substrate via the bonding member and a capacitance-type sensor device provided at a side of the substrate opposite to the support substrate. The substrate has a side surface, a first principal surface facing the support substrate, and a recessed step section that is located between the side surface and the first principal surface and connects the side surface to the first principal surface. The bonding member extends along the first principal surface and the step section.

A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the MEMS structure. The substrate may include an electric contact which is laterally displaced from the lid on the first side of the substrate and electrically coupled to the MEMS structure.

A semiconductor package including a semiconductor die and at least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy diffusion barrier layer abutting a gold layer.

The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.