A mixed-signal multi-chip package comprises a lead frame, a first die, and a digital die. The first die can provide an analog signal in an analog chip pad of the first die. The digital die can receive the analog signal from the first die through an analog chip pad. The analog input chip pad is coupled with the respective analog output chip pad of the first die by a first bonding wire. The digital die is configured to communicate with external circuitry using a digital signal-bearing signal exchanged via at least one first bond pad of the lead-frame. A second bond pad of the lead frame configured to be coupled to a DC voltage extends laterally along a plane of the lead-frame between the first bond pad and the first bonding wire, to form a DC guard between the first bond pad and the first bonding wire.

A sensor device package and method of manufacturing the same are provided. The sensor device package includes a carrier, a sensor component, an encapsulation layer and a protection film. The sensor component is disposed on the carrier, and the sensor component includes an upper surface and edges. The encapsulation layer is disposed on the carrier and encapsulates the edges of the sensor component. The protection film covers at least a portion of the upper surface of the sensor component.

A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

A semiconductor package includes a first die having a first surface, a first conductive bump over the first surface and having first height and a first width, a second conductive bump over the first surface and having a second height and a second width. The first width is greater than the second width and the first height is substantially identical to the second height. A method for manufacturing the semiconductor package is also provided.

A MEMS device having a wafer-level package, is provided with: a stack of a first die and a second die, defining at least a first internal surface internal to the package and carrying at least an electrical contact pad, and at least a first external surface external to the package and defining a first outer face of the package; and a mold compound, at least in part coating the stack of the first and second dies and having a front surface defining at least part of a second outer face of the package, opposite to the first outer face. The MEMS device is further provided with: at least a vertical connection structure extending from the contact pad at the first internal surface towards the front surface of the mold compound; and at least an external connection element, electrically coupled to the vertical connection structure and exposed to the outside of the package, at the second outer face thereof.

An apparatus includes a sensor assembly and a housing assembly. The sensor assembly may have (i) a package surrounding a sensor and (ii) a plurality of terminals integrated with the package. The housing assembly may have (i) a first cavity configured to receive the sensor assembly, (ii) a second cavity configured to receive an electrical connector, (iii) a plurality of ports in communication between the first cavity and the second cavity and (iv) a location feature configured to orient the housing assembly while the housing assembly is mounted to a structure. At least one rib may apply at least one force on the sensor assembly to hold the sensor assembly in the first cavity. The sensor may be outside a plane of the force. The terminals may extend through the ports from the first cavity to the second cavity.

A transducer assembly includes: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.