An optical micro-electromechanical system (MEMS) system is disclosed. The optical MEMS system includes a printed circuit board (PCB), and a MEMS optical integrated circuit (IC) package mounted to the PCB. The IC package includes a MEMS optical die, and a plurality of leads electrically and mechanically connected to the MEMS optical die and to the PCB. The optical MEMS system also includes one or more elastomeric grommets contacting one or more of the leads, where the grommets are configured to absorb mechanical vibration energy from the contacted leads.

Integrated microelectromechanical systems (MEMS) acoustic sensor devices are disclosed. Integrated MEMS acoustic sensor devices can comprise a MEMS acoustic sensor element and a pressure sensor within the back cavity associated with the MEMS acoustic sensor element. Integrated MEMS acoustic sensor devices can comprise a port adapted to receive acoustic waves or pressure. Methods of fabrication are also disclosed.

A semiconductor assembly includes a semiconductor package. An essentially planar portion of a die attach paddle is disposed above a semiconductor die. The planar portion forms a plane of the paddle. The area of the planar portion is greater than a combined area of an orthogonal projection of the die on the plane of the paddle. The planar portion is coupled via bond pads to first leads of the lead-frame. The first leads are configured to be coupled to a ground potential so that the planar portion forms a first ground plane inside the semiconductor package above the die. A second ground plane is disposed on the face of the printed circuit board that resides towards the semiconductor package. The second ground plane is coplanar with the plane of the paddle, and disposed under the body of the semiconductor package.

A one or multi-die module comprises multiple dies. The module includes at least one die with a sensor having a sensing region, an encapsulation layer covering top sides of the multiple dies, and a redistribution layer (RDL) covering bottom sides of the multiple dies except for the sensing region. In embodiments, a cap is formed over the sensing region, which has at least a portion that is spaced away from a bottom side of the module. Metal connectors, such as solder balls, are formed on the redistribution layer to provide connection points to the module. This approach can be used to incorporate environmental sensor dies into multi-die modules. It utilizes RDL and openings in the RDL in order to provide robust packaging for the dies, while also allowing the sensor dies to be selectively exposed to the environment.

A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.

A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106). The moulding compound is then introduced (110) into the packaging mould during a predetermined period of time (112) so that the moulding compound fills the predetermined pathways, thereby filling the second notional volume and surrounding the elongate sensor element within the second notional volume without contacting the elongate sensor element.

A pressure sensor assembly includes a sensor die and a ceramic substrate. The sensor die has a first side and a second side that is opposite to the first side. The sensor die includes a silicon chip that has a diaphragm configured to be exposed to a working fluid. The sensor die includes one or more electrical sensing elements mounted on the diaphragm and configured to measure a pressure of the working fluid. The sensor die is mounted to the ceramic substrate via a solder layer that engages the ceramic substrate and the second side of the sensor die.

A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.

A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.

The present invention is to provide an optical scanner module capable of reducing cross-talk generated between a sensor interconnect and a drive interconnect. An optical scanner module, includes an optical scanner apparatus that scans incident light by oscillating a mirror; and a package on which the optical scanner apparatus is mounted, wherein the optical scanner apparatus includes a displacement sensor that detects an oscillation angle of the mirror, wherein a sensor interconnect (P.sub.S) connected to the displacement sensor and a drive interconnect through which a drive signal for oscillating the mirror passes are respectively drawn from the optical scanner apparatus into the package, wherein interconnect layers (L1, L2) in which the sensor interconnect and the drive interconnect (P.sub.D) are formed are stacked, wherein the sensor interconnect and the drive interconnect are placed not to overlap in a plan view of the interconnect layers, and wherein a GND interconnect (P.sub.G) is provided between the sensor interconnect and the drive interconnect that are adjacent in a same interconnect layer.