A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.

One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate-in effect, heating the MEMS component and optionally related circuitry to a steady-state oven temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

The present disclosure relates to a microelectronics package with a vertically stacked structure of a microelectromechanical systems (MEMS) device and a controller device. The MEMS device includes a MEMS component, a MEMS through-via, and a MEMS connecting layer configured to electrically connect the MEMS component with the MEMS through-via. The controller device includes a controlling component, a controller through-via, and a controller connecting layer configured to electrically connect the controlling component with the controller through-via. The controller through-via is in contact with the MEMS through-via, such that the controlling component in the controller device is configured to control the MEMS component in the MEMS device.

An integrated circuit (IC) package comprising an IC die having a top surface and a bottom surface, an elongate member having opposite first and second end portions and a mid portion. The mid portion is positioned proximate the top surface of the IC die. The IC package also includes an encapsulant block having a top surface, a bottom surface and opposite first and second lateral side surfaces. The encapsulant block encapsulates the IC die and the elongate member. Either or both of the first and second end portions of the elongate member are exposed.

An integrated circuit (IC) package comprising an IC die having a top surface and a bottom surface, an elongate member having opposite first and second end portions and a mid portion. The mid portion is positioned proximate the top surface of the IC die. The IC package also includes an encapsulant block having a top surface, a bottom surface and opposite first and second lateral side surfaces. The encapsulant block encapsulates the IC die and the elongate member. Either or both of the first and second end portions of the elongate member are exposed.

A microelectromechanical device that comprises a wafer plate, a group of one or more wafer connector elements, and an electrical distribution layer between them. For reduced device thickness, the wafer plate comprises at least two dies and bonding material that bonds the at least two dies alongside each other to the longitudinal extent of the wafer plate, wherein at least one of the dies is a microelectromechanical die. The electrical distribution layer covers the wafer plate and includes a layer of dielectric material and a layer of conductive material, wherein the layer of conductive material is patterned within the layer of dielectric material for electrical interconnection of the dies and the wafer connector elements. With the new configuration, significantly reduced MEMS device thicknesses are achieved.

A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.

Methods for fabricating semiconductor or micromachined devices with metal structures and methods for forming self-aligned deep cavity metal structures are provided. A method for fabricating a device with a metal structure includes patterning a mask with an opening perimeter bounding an opening over a substrate. The method includes performing an isotropic etch to etch a shallow portion of the substrate exposed by the opening and a shallow portion of the substrate underlying the opening perimeter of the mask. The method also includes performing an anisotropic etch to etch a deep portion of the substrate exposed by the mask opening and a deep portion of the substrate underlying the opening perimeter of the mask to form a cavity having a bottom surface. Further, the method includes depositing metal over the mask, into the mask opening and onto the bottom surface, wherein the metal on the bottom surface forms the metal structure.

A microelectronic component arrangement includes a sensor and a carrier. The sensor has a detection surface and a region including contact elements situated at a first distance with respect to one another. The carrier includes a mounting surface, and the sensor is fixed on the carrier by the contact elements situated at a first distance with respect to one another at least regionally. The detection surface is opposite the mounting surface in a manner having a second distance with respect to the mounting surface. The contact elements are wetted by a mechanically stabilizing material, the region including the contact elements is enclosed by the mechanically stabilizing material, and the detection surface is free of the mechanically stabilizing material.

A MEMS micro-mirror assembly (250, 300, 270, 400) comprising, a MEMS device (240) which comprises a MEMS die (241) and a magnet (231); a flexible PCB board (205) to which the MEMS device (240) is mechanically, and electrically, connected; wherein the flexible PCB board (205) further comprises a first extension portion (205b) which comprises a least one electrical contact (259a,b) which is useable to electrically connect the MEMS micro-mirror assembly (250, 300, 270, 400) to another electrical component). There is further provided a projection system comprising such a MEMS micro-mirror assembly (250, 300, 270, 400).