A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template, including a plurality of pores, from the other oxidizable material layer, and growing a nano-pillar inside each pore. The nano-pillar has a predefined length that terminates at an end. A portion of the template is selectively removed to form a substantially even plane that is oriented in a position opposed to the substrate. A material is deposited on at least a portion of the plane to form a film layer thereon, and the remaining portion of the template is selectively removed to expose the nano-pillars.

Provided is a nanoscale patterning method using self-assembly, wherein nanoscale patterns having desirable shapes such as a lamella shape, a cylinder shape, and the like, may be formed by using a self-assembly property of a block copolymer, and low segment interaction caused in a structure of 10 nm or less which is a disadvantage of the block copolymer may be prevented. In addition, even though single photolithography is used, pattern density may double as that of the existing nano patterns, and pitch and cycle of the patterns may be controlled to thereby be largely utilized for electronic apparatuses requiring high integration of circuits such as a semiconductor device, and the like.

A method of forming a nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.

A method for forming a device includes blending, in a mixer within a fabrication facility, a first liquid including a first block copolymer with a second liquid including a second block copolymer to form a first mixture. The first block copolymer includes a first homopolymer and a second homopolymer, where the first homopolymer has a first mole fraction in the first liquid. The second block copolymer includes the first homopolymer and the second homopolymer, the first homopolymer having a second mole fraction in the second liquid, the first mole fraction being different from the second mole fraction. The method includes placing a substrate over a substrate holder of a processing chamber within the fabrication facility; and coating the substrate with the first mixture within the processing chamber.

A highly-ordered nano-structure array, formed on a substrate, mainly comprises a plurality of highly-ordered nano-structure units. Each of the highly-ordered nano-structure units forms a receiving compartment. One end of the receiving compartment opposite to the substrate has an opening. Each of the highly-ordered nano-structure units comprises at least one thin film layer. A periphery and a bottom of the receiving compartment are defined by an inner surface of a surrounding portion of the at least one thin film layer and a top surface of a bottom portion of the at least one thin film layer, respectively. The at least one thin film layer is made of at least one material selected from the group consisting of: metal, alloy, oxide, nitride, and sulfide.

A pattern forming method of forming, with a mold, a pattern on a substrate held by a substrate holding unit capable of changing a holding force for each holding region includes setting, with a plurality of shot regions corresponding to a first holding region as a target for pattern formation, a first holding force in the first holding region smaller than a second holding force in a second holding region different from the first holding region, coating, with an imprint material, a region including the plurality of shot regions corresponding to the first holding region, and forming the pattern on the substrate by bringing the imprint material, with which the plurality of shot regions corresponding to the first holding region is coated, and the mold in contact with each other.

A scalable method of fabricating large area nanoparticle arrays is disclosed. The method uses a combination of nanofabrication and additive manufacturing techniques to fabricate ordered nanoparticle arrays on wide number of substrates, including flexible substrates. Nanosphere lithography may be used to form a monolayer of polymer nanospheres. A metal may be deposited on the nanospheres, using a physical vapor deposition technique. The nanoparticles may then be decomposed using intense pulsed light technique. Ordered nanoparticle arrays have several promising applications, for example, thin films with tailored light scattering signatures, sensors based on surface-enhanced Raman scattering, nanostructured electrode arrays, and ordered catalytic islands for nanostructure growth.

A structural molecular building block is provided and includes first structural molecules arranged in a three-dimensional structure and second structural molecules. Each of the second structural molecules is attached at a first region thereof to one of the first structural molecules to form the three-dimensional structure into a tessellating molecular building block and has a second region thereof for connection to a corresponding structural molecule of an additional tessellating molecular building block. The second structural molecules facilitate tessellation of the tessellating molecular building block with additional tessellating molecular building blocks to encourage growth of a macroscopic crystal.

A method of forming a structure comprises forming a pattern of self-assembled nucleic acids over a material. The pattern of self-assembled nucleic acids is exposed to at least one repair enzyme to repair defects in the pattern. The repaired pattern of self-assembled nucleic acids is transferred to the material to form features therein. A method of decreasing defect density in self-assembled nucleic acids is also disclosed. Self-assembled nucleic acids exhibiting an initial defect density are formed over at least a portion of a material and the self-assembled nucleic acids are exposed to at least one repair enzyme to repair defects in the self-assembled nucleic acids. Additional methods are also disclosed.

The present application relates to a block copolymer and a use thereof. The present application can provide a laminate which is capable of forming a highly aligned block copolymer on a substrate and thus can be effectively applied to production of various patterned substrates, and a method for producing a patterned substrate using the same.