The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a cap substrate is bonded to a device substrate. The cap substrate comprises a first trench, a second trench, and an edge trench recessed from at a front-side surface of the cap substrate. A stopper is disposed within the first trench and raised from a bottom surface of the first trench. The stopper has a top surface lower than the front-side surface of the cap substrate.

An electromechanical pressure sensor system, in particular microphone type, including an electromechanical transducer, signal processing device, a substrate for receiving at least one support of the electromechanical transducer and/or signal processing device, a protective cover arranged on the upper face of the substrate, the support of the electromechanical transducer and/or signal processing device being housed in at least one cavity located on the lower face of the substrate is disclosed.

A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.

Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.

A microelectromechanical systems (MEMS) package may include a wafer having a MEMS device; a metal cap partially anchored to the wafer where at least one point between the cap and the wafer is unanchored, the metal cap at least substantially extending over the MEMS device; an electrical contact pad electrically coupled to the MEMS device; and a sealing layer disposed over the metal cap and the wafer, such that the sealing layer seals a gap between an unanchored portion of the metal cap and the wafer to encapsulate the MEMS device; wherein the electrical contact pad and the metal cap include the same composition.

A method for manufacturing a structure comprising membranes overhanging cavities, comprises: a) forming cavities opening at a front face of a support substrate, the cavities having a depth and an area, and being spaced apart by a spacing; b) assembling, by way of direct bonding, a donor substrate on the support substrate to seal the cavities under vacuum, the direct bonding being hydrophilic and involving a given number of water monolayers at a contact interface between the substrates; and c) transferring a thin layer from the donor substrate onto the support substrate, the thin layer comprising the membranes.

A specific area is defined around each cavity in the plane of the contact interface and is expressed as a function of half of the spacing. The area, the depth of each cavity, and the specific area are defined in step a) to satisfy a particular relationship.

A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a first trench in a first device region, a second trench in a second region, and a scribe trench in a scribe line region are formed at a front side of a cap substrate. Then, a hard mask is formed and patterned over the cap substrate. Then, a stopper is formed by performing an etch to the cap substrate such that a first portion of a bottom surface of the first trench uncovered by the hard mask is recessed while a second portion of the bottom surface of the first trench covered by the hard mask is non-altered to form a stopper within the first trench. Then, a second etch is performed to the second trench to lower the bottom surface of the second trench.

A semiconductor structure includes a first substrate; a heater surrounded by the first substrate; a pressure adjusting material disposed over the first substrate and adjacent to the heater; a second substrate disposed over the first substrate; and a cavity enclosed by the first substrate and the second substrate, wherein the pressure adjusting material is disposed within the cavity.

A method for manufacturing a dual-cavity structure and a dual-cavity structure, including: etching on a semiconductor substrate to form a first trench array, tops of the first trench array being separated from each other and bottoms thereof being communicated with each other to form a first cavity; growing a first epitaxial layer on the semiconductor substrate on which the first trench array is formed, to cover the first trench array by the first epitaxial layer; etching on the first epitaxial layer to form a second trench array; tops of the second trench array being separated from each other and bottoms thereof being communicated with each other to form a second cavity; growing a second epitaxial layer on the first epitaxial layer on which the second trench array is formed; and etching the first epitaxial layer and the second epitaxial layer to form a straight groove.