Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.

Embodiments of the disclosure provide a micromachined mirror assembly having a mirror-base layer, a first reflective layer on a top surface of the mirror-base layer, and a second reflective layer on a bottom surface of the mirror-base layer. In an example, the first reflective layer is reflective to incident light of the micromachined mirror assembly, and the first reflective layer and the second reflective layer are made of a same material and have same dimensions.

A microelectromechanical systems (MEMS) package may include a wafer having a MEMS device; a metal cap partially anchored to the wafer where at least one point between the cap and the wafer is unanchored, the metal cap at least substantially extending over the MEMS device; an electrical contact pad electrically coupled to the MEMS device; and a sealing layer disposed over the metal cap and the wafer, such that the sealing layer seals a gap between an unanchored portion of the metal cap and the wafer to encapsulate the MEMS device; wherein the electrical contact pad and the metal cap include the same composition.

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

Provided herein is a method including forming a MEMS cap. A cavity is formed in the MEMS cap wafer, and a bond material is deposited on the MEMS cap wafer, wherein the bond material lines the cavity after the depositing. The MEMS cap wafer is bonded to a MEMS device wafer, wherein the bond material forms a bond between the MEMS cap wafer and the MEMS device wafer. A MEMS device is formed in the MEMS device wafer. The bond material is removed from the cavity.

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a first trench in a first device region, a second trench in a second region, and a scribe trench in a scribe line region are formed at a front side of a cap substrate. Then, a hard mask is formed and patterned over the cap substrate. Then, a stopper is formed by performing an etch to the cap substrate such that a first portion of a bottom surface of the first trench uncovered by the hard mask is recessed while a second portion of the bottom surface of the first trench covered by the hard mask is non-altered to form a stopper within the first trench. Then, a second etch is performed to the second trench to lower the bottom surface of the second trench.

A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The method includes providing a composite photoresist material that includes: (a) a first layer devoid of a hydrophobicity agent and (b) at least a second layer comprising the hydrophobicity agent. The composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.