A method of manufacturing a membrane device comprises: a first step of forming a pillar structure on a part of a Si substrate by etching; a second step of forming a first insulation layer on the Si substrate so as to expose a Si surface of an upper part of the pillar structure; a third step of forming a second insulation layer on the pillar structure and the first insulation layer; and a fourth step of etching the Si substrate from an opposite side of the second insulation layer and etching the pillar structure with the first insulation layer being a mask, to thereby form a membrane, which is a region free of the pillar structure in the second insulation layer.

The present invention relates to a process for selectively removing a block on one side using a wet etching process in connection with self-assembly block copolymer thin films that have etching-resisting properties different from each other. The present invention can form a vertical nanopore structure having a high aspect ratio, even in the case of a thick film which has a vertically oriented cylinder self-assembly structure and which has one or more periods, by overcoming the limit of the prior art, which cannot implement a vertical pore structure through wet etching.

A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), depositing a second layer of material (240) on the base material in the cavity (280), and subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.

The present technology provides for a microfluidic substrate configured to carry out PCR on a number of polynucleotide-containing samples in parallel. The substrate can be a single-layer substrate in a microfluidic cartridge. Also provided are a method of making a microfluidic cartridge comprising such a substrate. Still further disclosed are a microfluidic valve suitable for use in isolating a PCR chamber in a microfluidic substrate, and a method of making such a valve.

The present technology provides for a microfluidic substrate configured to carry out PCR on a number of polynucleotide-containing samples in parallel. The substrate can be a single-layer substrate in a microfluidic cartridge. Also provided are a method of making a microfluidic cartridge comprising such a substrate. Still further disclosed are a microfluidic valve suitable for use in isolating a PCR chamber in a microfluidic substrate, and a method of making such a valve.

A method for forming a film that covers a side wall of a through hole in a substrate having the through hole, the method including, in the following order, the steps of providing a substrate having a through hole that passes therethrough from a first surface to a second surface, which is a surface opposite to the first surface, forming, on the first surface, a lid member that blocks an opening of the through hole open on the first surface, recessing, in a direction away from the first surface, a surface of the lid member that blocks the opening by removing part of the lid member through the opening, and forming a film that covers the side wall of the through hole.

A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

A silicon substrate processing method includes forming an etching mask which has an opening portion, on a surface of a silicon substrate, forming an etching guide hole in the opening portion on the silicon substrate, and forming a through-hole which passes through the silicon substrate, by applying an etching treatment onto the silicon substrate in which the etching guide hole is formed. In the forming of the guide hole, the etching guide hole passing through the silicon substrate is formed by irradiating the opening portion with a laser beam a plurality of times, with a cooling period between each instance of irradiation with the laser beam.

There is provided a nozzle substrate including a nozzle hole penetrating in a thickness direction. The nozzle substrate includes a main substrate including a first surface and a second surface, an oxidation film formed on the second surface of the main substrate, and a water repellent film formed on a surface at an opposite side to the main substrate side of the oxidation film. The nozzle hole includes a first through hole penetrating the main substrate in a thickness direction, a second through hole penetrating the oxidation film and being connected to the first through hole, and a third through hole penetrating the water repellent film and being connected to the second through hole. An inner circumference surface of the second through hole and an inner circumference surface of the third through hole are approximately flush.

A technique relates to a nanogap array. A substrate has been anisotropically etched with trenches that have tapered sidewalls. A sacrificial layer is on bottoms and the tapered sidewalls of the trenches. A filling material is formed on top of the sacrificial layer in the trenches. Nanogaps are formed where at least a portion of the sacrificial layer has been removed from the tapered sidewalls of the trenches while the sacrificial layer remains on the bottoms of the trenches. Each of the nanogaps is formed between one tapered sidewall of the substrate and a corresponding tapered sidewall of the filling material. The one tapered sidewall of the substrate opposes the corresponding tapered sidewall. A capping layer is disposed on top of the substrate and the filling material, such that the nanogaps are covered but not filled in.