In an embodiment a method for forming a pressure sensor device includes providing a pressure sensor on a substrate body, the pressure sensor comprising a membrane, depositing a top layer on top of the substrate body and the pressure sensor, connecting a cap body with the top layer, a mass of the cap body being approximately equal to a mass of the substrate body and introducing at least one opening in the cap body.

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.

A method including fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a hardmask on a second side of the device wafer, wherein the second side is planar. An etch stop layer is deposited over the hardmask and an exposed portion of the second side of the device wafer. A dielectric layer is formed over the etch stop layer. A via is formed within the dielectric layer. The via is filled with conductive material. A eutectic bond layer is formed over the conductive material. Portions of the dielectric layer uncovered by the eutectic bond layer is etched to expose the etch stop layer. The exposed portions of the etch stop layer is etched. A micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

A die-wrapped packaged device includes at least one flexible substrate having a top side and a bottom side that has lead terminals, where the top side has outer positioned die bonding features coupled by traces to through-vias that couple through a thickness of the flexible substrate to the lead terminals. At least one die includes a substrate having a back side and a topside semiconductor surface including circuitry thereon having nodes coupled to bond pads. One of the sides of the die is mounted on the top side of the flexible circuit, and the flexible substrate has a sufficient length relative to the die so that the flexible substrate wraps to extend over at least two sidewalls of the die onto the top side of the flexible substrate so that the die bonding features contact the bond pads.

Provided is a method of manufacturing a MEMS device including forming, in a metal layer, an opening that enables a first space and a second space to communicate with each other by exposing the metal layer to an etching solution in a state where the metal layer is left at a boundary between the first space and the second space, and covering an inner surface of an opening of each of an adhesive layer and the metal layer by forming a protective layer from an inner surface of the first space to an inner surface of the second space after the opening of the metal layer is formed.

The present disclosure provides a method for processing a conductive structure. The method includes the following steps of: forming on a first surface a groove concave from the first surface towards a second surface by means of dry etching; extending the groove from the second surface to form a via through a silicon base; and processing a conductive structure within the via. The method can be applied to a silicon base having a thickness larger than 300 μm. It breaks the limit on thickness that can be processed in the related art and is capable of providing electrical connectivity on both sides of a silicon base. The method is simple and highly reliable, has high processing efficiency and is applicable to mechanized production.

Examples include a fluidic die. The fluidic die comprises an array of field effect transistors including field effect transistors of a first size and field effect transistors of a second size. At least one connecting member interconnects at least some of the field effect transistors of the array of field effect transistors. The fluidic die further comprises a first fluid actuator connected to a first set of field effect transistors having at least one field effect transistor of the first size. The die includes a second fluid actuator connected to a second respective set of field effect transistors having a first respective field effect transistor of the second size interconnected to at least one other field effect transistor of the array.

A MEMS microphone includes a first dummy pad elevating a circumferential portion of an intermediate insulation layer adjacent to a second pad electrode, a second dummy pad elevating a first circumferential portion of an upper insulation layer adjacent to the second pad electrode, and a third dummy pad elevating a second circumferential portion of the upper insulation layer adjacent to the first pad electrode. Thus the first circumferential portion of the upper insulation layer is elevated relative to an upper surface of the second pad electrode, and the second circumferential portion of the upper insulation layer is elevated relative to an upper surface of the first pad electrode.

Methods of manufacturing a biocompatible, hermetic feedthrough monolithically integrated with a biocompatible ribbon cable are described, as well as the resulting devices themselves. The hermetic feedthrough is created by placing glass over a mold of doped silicon or other material with a higher melting temperature than the glass and heating it to reflow the glass into the mold. The glass is then ground or otherwise removed to reveal a flat surface, and tiny pillars that were in the mold are isolated in the glass to form electrically conductive vias. The flat surface is used to cast a polymer and build up a ribbon cable, photolithographically or otherwise, that is monolithically attached to the vias.