A manufacturing method of microelectromechanical system (MEMS) device includes providing a first, a second and a third substrates, wherein the first substrate includes a first and a second circuit, the second substrate includes second and third connection areas, and the third substrate includes first connection areas. Second grooves and a dividing groove are formed on the fourth surface of the third substrate. The second and third substrates are bonded to make the first and the second connection areas correspondingly connect with each other. The second substrate is divided to form electrically isolating first and second movable elements. The first movable element is spatial separated from the third substrate and corresponding to the second groove. The second movable element is connected to the third substrate. The first and the second substrates are bonded to make the fourth and the third connection areas connect correspondingly. The third substrate is thinned, divided into a first and a second cap from the dividing groove, and formed a first groove from the fifth surface. The first cap is corresponding to the first movable element and the first circuit. Air tight space to sense a pressure variation of exterior environment is formed between the first substrate and the second cap. The second movable element is movable with the second cap by the pressure variation of the exterior environment. Accordingly, the pressure sensor and the MEMS structure for sensing other physical quantity can be integrated in the foregoing MEMS device by a single process.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip including an epitaxial layer overlying a microelectromechanical systems (MEMS) substrate. The method includes bonding a MEMS substrate to a carrier substrate, the MEMS substrate includes monocrystalline silicon. An epitaxial layer is formed over the MEMS substrate, the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts are formed over the epitaxial layer, the plurality of contacts respectively form ohmic contacts with the epitaxial layer.

Embodiments of the application provide a MEMS chip and an electrical packaging method for a MEMS chip. The MEMS chip includes a MEMS device layer, a first isolating layer located under the MEMS device layer, and a first conducting layer located under the first isolating layer. At the first isolating layer, there are a corresponding quantity of first conductive through holes in locations corresponding to conductive structures in a first region and in locations corresponding to electrodes in a second region. At the first conducting layer, there are M electrodes spaced apart from one another, and the M electrodes are respectively connected to M of the first conductive through holes. At the first conducting layer, electrodes in locations corresponding to at least some of the conductive structures in the first region are electrically connected in a one-to-one correspondence to electrodes in locations corresponding to at least some of the electrodes in the second region.

A die-wrapped packaged device includes at least one flexible substrate having a top side and a bottom side that has lead terminals, where the top side has outer positioned die bonding features coupled by traces to through-vias that couple through a thickness of the flexible substrate to the lead terminals. At least one die includes a substrate having a back side and a topside semiconductor surface including circuitry thereon having nodes coupled to bond pads. One of the sides of the die is mounted on the top side of the flexible circuit, and the flexible substrate has a sufficient length relative to the die so that the flexible substrate wraps to extend over at least two sidewalls of the die onto the top side of the flexible substrate so that the die bonding features contact the bond pads.

Disclosed herein are microelectronics package architectures having self-aligned air gaps and methods of manufacturing the same. The microelectronics packages may include first and second substrates, first and second traces, and a photosensitive material. The first trace may be attached to the first substrate and comprise a first sidewall. The second trace may be attached to the first substrate and comprise a second sidewall. The second traced may be spaced a distance from the first trace with the second sidewall facing the first sidewall. First and second portions of the photosensitive material may be attached to the first and second sidewalls, respectively. The second substrate may be attached to the first and second traces. The first and second substrates and the first and second traces may form the air gap in between the first and second traces.

The present disclosure provides a method for processing a conductive structure. The method includes the following steps of: forming on a first surface a groove concave from the first surface towards a second surface by means of dry etching; extending the groove from the second surface to form a via through a silicon base; and processing a conductive structure within the via. The method can be applied to a silicon base having a thickness larger than 300 m. It breaks the limit on thickness that can be processed in the related art and is capable of providing electrical connectivity on both sides of a silicon base. The method is simple and highly reliable, has high processing efficiency and is applicable to mechanized production.

Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

The present invention relates to an electrical contact. In particular, it relates to an electrical contact capable of establishing an electrical contact with a soft material. More particular, the electrical contact comprises (a) a non-Newtonian liquid metal alloy, the non-Newtonian liquid metal alloy is formed in a polymer insulator, wherein the contact surface of the electrical contact that contacts the soft material is a smooth flat non-patterned surface, the surface comprising the non-Newtonian liquid metal alloy sandwiched between the polymer insulator. The microfluidic device comprising the electrical contact and a method for forming the electrical contact are also disclosed.

A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a substrate over a micro-electro-mechanical system (MEMS) substrate. The substrate includes a semiconductor via. The method also includes forming a dielectric layer over a top surface of the substrate, and forming a polymer layer over the dielectric layer. The method further includes patterning the polymer layer to form an opening, and the semiconductor via is exposed by the opening. The method includes forming a conductive layer in the opening and over the polymer layer, and forming an under bump metallization (UBM) layer on the conductive layer. The method further includes forming an electrical connector over the UBM layer, wherein the electrical connector is electrically connected to the semiconductor via through the UBM layer.

A pressure sensor device comprises a substrate body, a pressure sensor comprising a membrane, and a cap body comprising at least one opening. The pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to the main plane of extension of the substrate body, and the mass of the substrate body equals approximately the mass of the cap body. Furthermore, a method for forming a pressure sensor device is provided.