A method for determining at least one reflow parameter for obtaining a structure approximating a sought structure by reflowing an initial structure different to the sought structure, the initial structure including at least one pattern formed in a thermo-deformable layer arranged on a substrate. The thermo-deformable layer forms a residual layer surrounding each pattern and from which each pattern extends such that each pattern has an interface only with the surrounding medium. The method includes: predicting progression over time of geometry of the initial structure subject to reflow, to obtain a plurality of predicted structures each associated with reflow parameters including at least a reflow time and a reflow temperature; computing correlation values of the geometry of each predicted structure with respect to the sought structure; identifying reflow parameters for obtaining the predicted structure offering a highest correlation value.

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.

A manufacturing method for a micromechanical window structure including the steps: providing a substrate, the substrate having a front side and a rear side; forming a first recess on the front side; forming a coating on the front side and on the first recess; and forming a second recess on the rear side, so that the coating is at least partially exposed, whereby a window is formed by the exposed area of the coatings.

A micromechanical component including a mounting support, a coil winding retained by a coil brace, and an adjustable part, the coil brace and the adjustable part being connected to each other and via at least one spring element with the mounting support in such a way that the adjustable part is adjustable relative to the mounting support about at least one axis of rotation, and a stop support being fixedly disposed or developed on the mounting support and being at least partially framed by the coil brace, which stop support has at least one first stop area protruding on a surface of the mounting support, which limits a relative movement at least of the coil brace in at least one direction relative to the mounting support by a contact of the at least one first stop area with the coil brace.

A method for forming a microelectromechanical systems (MEMS) device may include performing a first silicon-on-nothing process to form a first cavity in a substrate. The method may include depositing an epitaxial layer on a surface of the substrate. The method may include performing a second silicon-on-nothing process to form a second cavity in the epitaxial layer. The method may include exposing the first cavity and the second cavity by removing a portion of the substrate and the epitaxial layer.

A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.

Method of fabricating a microelectromechanical structure et comprising two elements suspended from a support, a cavity made in the support, said cavity having two different depths, including: fabrication of a mask on an element comprising a substrate and a structured layer formed on the substrate, said structured layer comprising the two elements that will be suspended above the cavity, the mask being formed above the structured layer, said mask comprising openings with different sections, the openings being distributed in two zones, each zone comprising openings with the same section, anisotropic etching of the element so as to define the two depths under the two suspended elements in the substrate through the structured layer, isotropic etching of the element so as to make the cavity under the suspended elements.

A method for producing a microstructure is disclosed. A master is provided having a pattern formed of conductive material embedded in a non-conducting substrate. The master has a master surface having a conducting portion defined by the pattern and a non-conducting portion defined by the non-conducting substrate. A surface treatment is applied to the master surface to alter the adhesion properties of at least one of the conducting portion or the non-conducting portion. The microstructure is formed by deposition or plating of a functionalising material onto the master surface, and the microstructure is then separated from the master. The master can be reused.

A system including two components intended to be in friction contact with each other in a given direction, wherein the friction occurs in a functional area, wherein the system is at least one of the two components including, on a surface in the functional area, a texture formed of a series of troughs of rounded shape separated by peaks or a series of bumps of rounded shape separated by troughs, the troughs extending parallel in the given direction and allowing for the evacuation of debris produced by friction and serving as a reservoir for a lubricant. A method for manufacturing at least one component or a mold by the DRIE (deep reactive ion etching) process, wherein surface defects on the sidewalls machined by the DRIE process are used to form the troughs.