The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least: a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411, 411) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step; c) a step of removing (461, 462) the modified zones (411, 411, 411), the removal comprising a step of etching the modified zones (411, 411, 411) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.

A method of fabricating three-dimensional (3D) structures comprises forming a patterned area in a handle wafer, and bonding a mold wafer over the patterned area to produce one or more sealed cavities having a first pressure in the handle wafer. The mold wafer is heated past its softening point at a second pressure different from the first pressure to create a differential pressure across the mold wafer over the sealed cavities. The mold wafer is then cooled to harden the mold wafer into one or more 3D shapes over the sealed cavities. One or more materials are deposited on an outer surface of the mold wafer over the 3D shapes to form a structure layer having 3D structures that conform to the hardened 3D shapes of the mold wafer. The 3D structures are then bonded to a device wafer, and the handle wafer is removed to expose the 3D structures.

The present invention relates to an easy, scalable method, relying on conventional and unconventional techniques, to incorporate tilt in the fabrication of synthetic polymer-based dry adhesives mimicking the gecko adhesive system. These dry, reversible adhesives demonstrate anisotropic adhesion properties, providing strong adhesion and friction forces when actuated in the gripping direction and an initial repulsive normal force and negligible friction when actuated in the releasing direction.

An ion generating device, a method for manufacturing an ion generating device, and an air conditioner are provided. The ion generating device may include a discharge electrode that generates ions, and a power supply that applies power to the discharge electrode. The discharge electrode may include a support formed of a conductor, and a discharge pin formed to protrude from a surface of the support and having a tip. The discharge pin may include nickel (Ni).

The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a Bosch etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer.

A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

An ion generating device, a method for manufacturing an ion generating device, and an air conditioner are provided. The ion generating device may include a discharge electrode that generates ions, and a power supply that applies power to the discharge electrode. The discharge electrode may include a support formed of a conductor, and a discharge pin formed to protrude from a surface of the support and having a tip. The discharge pin may include nickel (Ni).

Plastic microfluidic structures having a substantially rigid diaphragm that actuates between a relaxed state wherein the diaphragm sits against the surface of a substrate and an actuated state wherein the diaphragm is moved away from the substrate. As will be seen from the following description, the microfluidic structures formed with this diaphragm provide easy to manufacture and robust systems, as well readily made components such as valves and pumps.

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. An electrical potential is applied across the interface of the semiconductor and the solution with a specified temporal profile relative to the temporal profile of the spatial pattern of illumination. Such methods are applied to the fabrication of a photodetector integral with a parabolic reflector, cell size sorting chips, a three-dimensional photonic bandgap chip, a photonic integrated circuit, and an integrated photonic microfluidic circuit.

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.