A micro gas chromatograph includes one or more separator columns formed within a device layer. The separator columns have small channel cross sections and long channel lengths with atomic-smooth channel sidewalls enabling a high channel packaging density, multiple channels positioned on top of each other, and channel segments that are thermally decoupled from the substrates. The micro gas-chromatograph also enables electrostatic and thermal actuators to be positioned in close proximity to the separator columns such that the material passing through the columns is one or more of locally heated, locally cooled, and electrically biased.

A method of manufacturing a component having a microfluidic structure, comprising embossing recesses in an embossed lacquer layer, partially curing the embossed lacquer layer, sealing the recesses with a curable bonding lacquer layer, and curing the partially cured embossing lacquer layer and the bonding lacquer layer, as well as a component obtainable by the method and the use of the component.

Provided is a synthetic quartz glass substrate for use in a microfluidic device to which bonding by optical contact can be applied in manufacturing a microfluidic device, and which has high adhesion in a bonded interface and does not cause defects such as non-bonding and breakage of the substrate and a defect in which air bubbles are sandwiched at the bonded interface.

A synthetic quartz glass substrate for use in a microfluidic device, wherein a maximum value of a cyclic average power spectral density at a spatial frequency of 0.4 mm.sup.−1 or more and 100 mm.sup.−1 or less is 5.0×10.sup.15 nm.sup.4 or less, the maximum value being obtained by measuring any given region of 6.0 mm×6.0 mm on a surface of the synthetic quartz glass substrate with a white interferometer.

Microfluidic devices having superhydrophilic bi-porous interfaces are provided, along with their methods of formation. The device can include a substrate defining a microchannel formed between a pair of side walls and a bottom surface and a plurality of nanowires extending from each of the side walls and the bottom surface. For example, the nanowires can be silicon nanowires (e.g., pure silicon, silicon oxide, silicon carbide, etc., or mixtures thereof).

Embodiments herein disclose a method for fabricating high aspect ratio structures. The method includes depositing a predefined quantity of a viscoelastic fluid on a top surface of a bottom cell plate and compressing the viscoelastic fluid deposited on the top surface of the bottom cell plate using a bottom surface of a top cell plate. The viscoelastic fluid is a blend of a solvent and a polymer. At least one of the top cell plate and bottom cell plate comprises a plurality of lands, sealed source holes and/or unsealed source hole for penetration of a low-viscous fluid. Further, the method includes separating the top cell plate and the bottom cell plate to induce out of plane stretching of the high viscous fluid and obtaining a plurality of high aspect ratio structures between the top cell plate and the bottom cell plate due to the penetration of the low-viscous fluid.

The present disclosure provides a microchannel device including a first base having a defining surface that defines a flow channel and containing a polymer that contains a fluorine atom and a second base having a defining surface that defines the flow channel together with the defining surface of the first base, having solvent resistance, and coming into contact with the first base, in which an arithmetic average roughness Ra of a surface of the first base, exposed by peeling the second base from the first base, is 1 μm or more, and provides a use application thereof.

A microstructure and a method for manufacturing the same includes: disposing a liquid film on a surface of a substrate, wherein a solid-liquid interface is formed where the liquid film is in contact with the substrate; and irradiating the substrate with a laser of a predetermined waveband to etch the substrate at the solid-liquid interface, wherein the position where the laser is irradiated on the solid-liquid interface moves at least along a direction parallel to the surface of the substrate, and the absorption rate of the liquid film for the laser is greater than the absorption rate of the substrate for the laser.

A device includes a first layer of an electrically insulating material and a second layer of a non-electrically insulating material (e.g., semiconductor or electrically conductive) extending on the first layer. The second layer is structured so as to define opposite, lateral walls of a microchannel, a bottom wall of which is defined by an exposed surface of the first layer. The second layer is further structured to form one or more electrical insulation barriers; each barrier includes a line of through holes, each surrounded by an oxidized region of the material of the second layer. The through holes alternate with oxidized portions of the oxidized region along the line. Each barrier extends, as a whole, laterally across the second layer up to one of the lateral walls and delimits two sections of the second layer on each side of the barrier and on a same side of the microchannel.

Microfluidic chips that can comprise thin substrates and/or a high density of vias are described herein. An apparatus comprises: a silicon device layer comprising a plurality of vias, the plurality of vias comprising greater than or equal to about 100 vias per square centimeter of a surface of the silicon device layer and less than or equal to about 100,000 vias per square centimeter of the surface of the silicon device layer, and the plurality of vias extending through the silicon device layer; and a sealing layer bonded to the silicon device layer, wherein the sealing layer has greater rigidity than the silicon device layer. In some embodiments, the silicon device layer has a thickness between about 7 micrometers and about 500 micrometers while a via of the plurality of vias has a diameter between about 5 micrometers and about 5 millimeters.

An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.