A method of providing a MEMS device including a through-hole in a layer of structural material using a multitude of MEMS method steps. A versatile method to create a through-hole, in particular a multitude thereof, involves a step of exposing a polymeric layer of positive photoresist in a direction from the outer surface of the positive photoresist to light resulting in an exposed layer of positive photoresist including relatively strongly depolymerized positive photoresist in the top section of a recess while leaving relatively less strongly depolymerized positive photoresist in the bottom section of the recess.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A piezoelectric microelectromechanical systems microphone is provided comprising a sensor, an anchor region at which the sensor is supported by a substrate, a first region of the sensor adjacent to the anchor region having a first compliance, the first region having at least one piezoelectric layer and at least one electrode, and a second region of the sensor, the second region being adjacent to the first region, having at least one piezoelectric layer and at least one electrode, and having a second compliance, the first and second compliances being different. A method for manufacturing a piezoelectric microelectromechanical systems microphone is also provided.

A pick-up head picks up a semiconductor device from a carrier substrate. The pick-up head includes a first leg portion, a second leg portion, a raised bridge base portion between the first and second leg portions, and a tip portion mounted on the raised bridge base portion. The tip portion engages with the semiconductor device to pick up the semiconductor device from the carrier substrate. The pick-up head is associated with a force detection mechanism that detects a force applied to the pick-up head for picking up the semiconductor device. The force detection mechanism includes cavities formed on the first leg portion and/or second leg portion, pillars arranged on the pick-up head, a force detection device arranged in a mount assembly that is attached on the pick-up head, or electrodes arranged on the mount assembly. Actuation of the pick-up head is determined based on the detected force.

A method for making a cantilever sensor includes forming a beam extending between a proximal portion and a distal end, and forming and attaching an electrode on the proximal portion. The beam is attached to a substrate in cantilever form so that the proximal portion of the beam is anchored to the substrate and the distal end of the beam is unsupported. The method includes modifying the resonance frequency of the cantilever sensor by forming at least the tip of the beam of a material having one or both of a density and Young's modulus that provides the desired resonant frequency, or by forming at least the tip of the beam so that it has a greater height in a Z direction transverse to a length of the beam than the proximal portion of the beam to thereby tune a resonant frequency of the sensor.

A piezoelectric microelectromechanical systems microphone is provided comprising a sensor, an anchor region at which the sensor is supported by a substrate, a first region of the sensor adjacent to the anchor region, the first region having at least one piezoelectric layer and at least one electrode, and a second region of the sensor, the second region being adjacent to the first region, having at least one piezoelectric layer and at least one electrode, and having a thickness less than the thickness of the first region. A method for manufacturing a piezoelectric microelectromechanical systems microphone is also provided.

The present application relates to a contact-type vibration photon sensor using the Doppler effect and a manufacturing method therefor. A contact-type vibration photon sensor using the Doppler effect includes an outer packaging layer (9), and the outer packaging layer (9) further includes: a silicon-based material (1) and a mirror body (2); the silicon-based material (1) includes side walls (10) and a cavity (11) surrounded by the side walls (10) with a top opening; and the mirror body (2) is arranged inside the cavity (11), a mirror layer (21) is arranged on the top of the mirror body (2), the side surface of the mirror body (2) is connected with the side walls (10) through a cantilever beam (22), and the cantilever beam (22) is spring-shaped. The contact-type vibration photon sensor provided by the present application utilizes the Doppler effect to provide accurate precision, and uses a spring-shaped cantilever beam, thereby increasing the amplitude of the mirror body (2), and improving the sensitivity of the sensor when sensing vibration.

A cantilever sensor (e.g., piezoelectric sensor) includes a beam with a sensor or electrode at a proximal end and a tip that extends from the sensor to the distal (unsupported) end of the beam. The tip is modified to modify (e.g., tune) the resonant frequency of the cantilever sensor. The resonant frequency of the cantilever sensor is tuned by using a material for the tip with a stiffness (e.g., a Young's Modulus) and/or a mass or density that results in the desired resonant frequency. The resonant frequency of the cantilever sensor can also be tuned by modifying the shape of the tip to have a higher vertical structure in a Z direction transverse to a length of the beam of the sensor.

A piezoelectric sensor (e.g., for use in a piezoelectric MEMS microphone) includes a substrate and a cantilever beam attached to the substrate. The cantilever beam has a proximal portion attached to the substrate and extending to an unsupported distal end. An electrode is disposed on or in the proximal portion of the beam and has an outer boundary with a shape substantially corresponding to a contour line of a strain distribution plot for the cantilever beam resulting from a force applied to the cantilever beam.

An actuation structure of a MEMS electroacoustic transducer is formed in a die of semiconductor material having a monolithic body with a front surface and a rear surface extending in a horizontal plane x-y plane and defined in which are: a frame; an actuator element arranged in a central opening defined by the frame; cantilever elements, coupled at the front surface between the actuator element and the frame; and piezoelectric regions arranged on the cantilever elements and configured to be biased to cause a deformation of the cantilever elements by the piezoelectric effect. A first stopper arrangement is integrated in the die and configured to interact with the cantilever elements to limit a movement thereof in a first direction of a vertical axis orthogonal to the horizontal plane, x-y plane towards the underlying central opening.