B81C1/00166

Method of depositing electrodes and electrolyte on microelectromechanical system electrochemical sensors

Embodiments relate generally to systems, devices, and methods for depositing an electrode and an electrolyte on a microelectromechanical system (MEMS) electrochemical sensor. A method may comprise providing a blade on a surface of a substrate; providing a ridge along the perimeter of the substrate; pressing the electrode and the electrolyte onto the blade and the ridge; cutting the electrode into multiple electrodes; positioning the electrolyte to contact the surface, the blade, and the ridge; and positioning the multiple electrodes to contact the surface, the blade, and the ridge.

MANUFACTURING METHOD FOR 3D MICROELECTRODE
20230286799 · 2023-09-14 ·

Disclosed in the present disclosure is a manufacturing method for a 3D microelectrode. The manufacturing method includes the following steps: (1) manufacturing a 3D model of a 3D microelectrode; (2) pouring a flexible material into the 3D model, and performing demolding so as to form a flexible mold having a cavity, wherein the cavity of the flexible mold can be fitted to the 3D model; (3) performing silanization treatment on the flexible mold, then pouring a flexible material into the surface of the flexible mold having the cavity, and performing demolding so as to form a flexible 3D microelectrode substrate; and (4) manufacturing a conductive layer on the flexible 3D microelectrode substrate so as to form the 3D microelectrode. In the present disclosure, a 3D microelectrode having an ultrahigh microcolumn height can be manufactured by using a 3D printing technology and a two-time mold-reversing method.

Low-parasitic capacitance MEMS inertial sensors and related methods

Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

MEMS device with electrodes and a dielectric

A MEMS device can include a solid dielectric including a plurality of apertures, the solid dielectric having a first side and a second side. The MEMS device can include a first plurality of electrodes extending completely through a first subset of the plurality of apertures, a second plurality of electrodes extending partially through a second subset of the plurality of apertures, a third plurality of electrodes extending partially into a third subset of the plurality of apertures. The MEMS device can include a first diaphragm coupled to the first plurality and to the third plurality of electrodes, the first diaphragm facing the first side of the solid dielectric. The MEMS device can include a second diaphragm coupled to the first plurality and to the second plurality of electrodes the second diaphragm facing the second side of the solid dielectric.

METHOD OF MODIFYING A RESONANT FREQUENCY IN CANTILEVER SENSORS
20230136347 · 2023-05-04 ·

A method for making a cantilever sensor includes forming a beam extending between a proximal portion and a distal end, and forming and attaching an electrode on the proximal portion. The beam is attached to a substrate in cantilever form so that the proximal portion of the beam is anchored to the substrate and the distal end of the beam is unsupported. The method includes modifying the resonance frequency of the cantilever sensor by forming at least the tip of the beam of a material having one or both of a density and Young's modulus that provides the desired resonant frequency, or by forming at least the tip of the beam so that it has a greater height in a Z direction transverse to a length of the beam than the proximal portion of the beam to thereby tune a resonant frequency of the sensor.

Method of making ohmic contact on low doped bulk silicon for optical alignment

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.

METHOD TO PROTECT ELECTRODES FROM OXIDATION IN A MEMS DEVICE
20230371383 · 2023-11-16 ·

In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

Pizoelectric MEMS device with electrodes having low surface roughness

In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

Cellular array electrostatic actuator

Illustrative embodiments provide an electrostatic actuator and methods of making and operating an electrostatic actuator. The electrostatic actuator comprises a framework and a plurality of electrodes. The framework comprises walls defining a plurality of cells forming an array of cells. The plurality of electrodes comprise an electrode in each cell in the plurality of cells. A gap separates the electrode in each cell from the walls of the cell. The framework is configured to contract in response to an electrical signal applied between the framework and the plurality of electrodes.

CANTILEVER SENSOR WITH MODIFIED RESONANCE FREQUENCY
20230135200 · 2023-05-04 ·

A cantilever sensor (e.g., piezoelectric sensor) includes a beam with a sensor or electrode at a proximal end and a tip that extends from the sensor to the distal (unsupported) end of the beam. The tip is modified to modify (e.g., tune) the resonant frequency of the cantilever sensor. The resonant frequency of the cantilever sensor is tuned by using a material for the tip with a stiffness (e.g., a Young's Modulus) and/or a mass or density that results in the desired resonant frequency. The resonant frequency of the cantilever sensor can also be tuned by modifying the shape of the tip to have a higher vertical structure in a Z direction transverse to a length of the beam of the sensor.