A micro sensor including a first substrate and a second substrate is provided. The first substrate has a surface with a cavity. The second substrate has a sensing structure. The surface of the first substrate with the cavity is bonded to the second substrate to seal the cavity, such that a pressure value in the cavity is a constant value. A manufacturing method thereof is also provided.

This disclosure provides methods and apparatus related to thin films. In one aspect, a silicon wafer with a first silicon nitride layer disposed on a first side of the silicon wafer and a second silicon nitride layer disposed on a second side of the silicon wafer is provided. A first side of the first silicon nitride layer is disposed on the first side of the silicon wafer. The second silicon nitride layer is patterned. The silicon wafer is etched to expose the first side of the first silicon nitride layer. A polymer is deposited on a second side of the first silicon nitride layer. A first ceramic layer is deposited on the polymer disposed on the second side of the first silicon nitride layer using an atomic layer deposition process. The first silicon nitride layer and the polymer are etched to expose a first side of the first ceramic layer.

A semiconductor manufacturing method includes providing a wafer. A layer is formed over a surface of the wafer where the layer is able to form a eutectic layer with a conductive element. The layer is partially removed so as to form a plurality of mesas. The wafer is bonded to a substrate through the plurality of mesas. The substrate is thinned down to a thickness so as to be less than a predetermined value.

A method for assembling multi-component nano-structures that includes dispersing a plurality of nano-structures in a fluid medium, and applying an electric field having an alternating current (AC) component and a direct current (DC) component to the fluid medium containing the plurality of nano-structures. The electric field causes a first nano-structure from the plurality of nano-structures to move to a predetermined position and orientation relative to a second nano-structure of the plurality of nano-structures such that the first and second nano-structures assemble into a multi-component nano-structure.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.

A sensor element includes a membrane structure suspended on a frame structure, wherein the membrane structure includes a membrane element and an actuator. The membrane structure is deflectable in a first stable deflection state and in a second stable deflection state and is operable in a resonance mode in at least one of the first and the second stable deflection states. The actuator is configured to deflect the membrane structure in a first actuation state into one of the first and the second stable deflection states, and to operate the membrane structure in a second actuation state in a resonance mode having an associated resonance frequency.

A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.

A pressure sensor includes a silicon substrate which has a diaphragm, a frame-shaped side wall section which is placed on one surface side of the silicon substrate so as to surround the diaphragm in a plan view, a lid section which is placed so as to cover an opening of the side wall section and has a through-hole communicating inside and outside the side wall section, a sealing section which is placed on the lid section and seals the through-hole, and a pressure reference chamber which is defined by the silicon substrate, the side wall section, the lid section, and the sealing section, wherein a surface facing the pressure reference chamber of each of the side wall section and the lid section contains a silicon material.

A method for manufacturing a structure comprises a) providing a donor substrate comprising front and rear faces; b) providing a support substrate; c) forming an intermediate layer on the front face of the donor substrate or on the support substrate; d) assembling the donor and support substrates with the intermediate layer therebetween; e) thinning the rear face of the donor substrate to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; and wherein the donor substrate comprises a buried stop layer and a fine active layer having a first thickness less than the useful thickness, between the front face of the donor substrate and the stop layer; and after step e), removing, in first regions of the structure, a thick active layer delimited by the second free face of the useful layer and the stop layer.

A die-wrapped packaged device includes at least one flexible substrate having a top side and a bottom side that has lead terminals, where the top side has outer positioned die bonding features coupled by traces to through-vias that couple through a thickness of the flexible substrate to the lead terminals. At least one die includes a substrate having a back side and a topside semiconductor surface including circuitry thereon having nodes coupled to bond pads. One of the sides of the die is mounted on the top side of the flexible circuit, and the flexible substrate has a sufficient length relative to the die so that the flexible substrate wraps to extend over at least two sidewalls of the die onto the top side of the flexible substrate so that the die bonding features contact the bond pads.