A membrane based microelectronic device (200) can include a printed circuit board (202), a polymer film (210) laminated onto the circuit board, and one or more microelectromechanical components (208) integrated into the printed circuit board (202). At least a portion of the polymer film (210) forms a membrane element of the one or more microelectromechanical components (208).

Aspects of the disclosure provide a capacitive pressure sensor. The capacitive pressure sensor can include a first substrate having a first surface and a second surface, a movable plate at a bottom of a first cavity recessed into the substrate from the first surface, and a second substrate bonded to the first substrate over the first surface. A second cavity is formed between the movable plate and the second surface. The second substrate includes a fixed plate disposed over the movable plate to form a capacitor. The second substrate further includes a third cavity between a surface of the fixed plate opposite to the movable plate and a surface of the second substrate opposite to the first substrate.

A manufacturing method for multiple MEMS sound transducers includes manufacturing a reconstructed wafer, separating multiple chips from the wafer, and encapsulating the chips in a molding material. A piezoelectric element of the particular chips is exposed to become deflectable along a stroke axis. The reconstructed wafer is connected to multiple diaphragms associated with the particular chips, wherein the diaphragms are each connected to the associated piezoelectric element so that the diaphragms are each deflectable together with the at least one associated piezoelectric element along the stroke axis. MEMS sound transducers, each of which including at least one of the chips and one of the diaphragms, are isolated. A MEMS sound transducer, which has been manufactured using the aforementioned manufacturing method, is also disclosed.

A triple-membrane MEMS device includes a first membrane, a second membrane and a third membrane spaced apart from one another, wherein the second membrane is between the first membrane and the third membrane, a sealed low pressure chamber between the first membrane and the third membrane, a first stator and a second stator in the sealed low pressure chamber, and a signal processing circuit configured to read-out output signals of the triple-membrane MEMS device.

In an embodiment a device includes a substrate including an upper substrate surface and a lower substrate surface and a membrane-layer suspended above the upper substrate surface, wherein the substrate includes a recess penetrating the substrate between the lower substrate surface and the upper substrate surface, wherein the membrane-layer spans the recess, wherein the recess includes an upper recess region, an intermediate recess region, and a lower recess region, wherein the upper recess region is a part of the recess in direct vicinity to the upper substrate surface, the intermediate recess region is a part of the recess directly below the upper recess region, and the lower recess region is a part of the recess other than the upper recess region and the intermediate recess region, and wherein a cross-sectional area of the upper recess region determined parallel to the upper substrate surface is larger than a respective cross-sectional area of the intermediate recess region.

A support structure for a micro-vibrator includes: a micro-vibrating body having a curved surface portion and a recess recessed from the curved surface portion; and a support member having a rod and an adhesive member arranged at a tip end of the rod. The support member is adhered on a connecting surface of the recess through the adhesive member. The connecting surface of the recess is an internal bottom surface of the recess.

A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.

In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

A method for manufacturing a polysilicon SOI substrate including a cavity. The method includes: providing a silicon substrate including a sacrificial layer thereon; producing a first polysilicon layer on the sacrificial layer; depositing a structuring layer on the first polysilicon layer; introducing trenches through the structuring layer, the first polysilicon layer, and the sacrificial layer up to the silicon substrate; producing a cavity in the silicon substrate by etching, an etching medium being conducted thereto through the trenches; producing a second polysilicon layer on the first polysilicon layer, the trenches being thereby closed. A micromechanical device is also described.

A piezoelectric microelectromechanical acoustic transducer, having a semiconductor substrate with a frame portion and a through cavity defined internally by the frame portion; an active membrane, suspended above the through cavity and anchored, at a peripheral portion thereof, to the frame portion of the substrate by an anchorage structure, a plurality of piezoelectric sensing elements carried by a front surface of the active membrane so as to detect mechanical stresses of the active membrane; a passive membrane, suspended above the through cavity, underneath the active membrane, interposed between the through cavity and a rear surface of the active membrane; and a pillar element, which fixedly couples, and is centrally interposed between, the active membrane and the passive membrane. A ventilation hole passes through the entire active membrane, the passive membrane and the pillar element to set the through cavity in fluidic communication with the front surface of the active membrane.