A MEMS assembly includes a package, wherein the package includes a substrate and a cover element, wherein a through opening is provided in the cover element, a MEMS component within the package on the cover element, an integrated circuit arrangement within the package on the substrate, and a support component within the package on the substrate, wherein the support component on the substrate is electrically coupled, by first electrical connection lines, to the MEMS component on the cover element and is electrically coupled, by second electrical connection lines, to the circuit arrangement on the substrate in order to produce an electrical connection between the MEMS component and the integrated circuit arrangement.

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die includes a first device layer formed from glass materials. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die resides over a top surface of the multilayer redistribution structure. The multilayer redistribution structure includes at least one support pad that is on a bottom surface of the multilayer redistribution structure and vertically aligned with the first thinned die. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

In a multi-chip module (MCM), a super chip (110N) is attached to multiple plain chips (110F super and plain chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.

A force sensor comprises a first substrate, a second substrate, a third substrate, and a package body. The first substrate includes a fixed electrode, at least one first conductive contact, and at least one second conductive contact. The second substrate is disposed on the first substrate and electrically connected to the first conductive contact of the first substrate. The second substrate includes a micro-electro-mechanical system (MEMS) element corresponding to the fixed electrode. The third substrate is disposed on the second substrate and includes a pillar connected to the MEMS element. The package body covers the third substrate. The foregoing force sensor has better reliability.

A Micro Electro Mechanical systems (MEMS) device includes a solder bump on a substrate, a CMOS-MEMS die comprising a CMOS die and a MEMS die, and stud bumps on the CMOS die. The MEMS die is disposed between the CMOS die and the substrate. The stud bumps and the solder bumps are positioned to provide an electrical connection between the CMOS die and the substrate.

In a first aspect, the invention relates to a method for producing a gas-filled reference chamber which is hermetically sealed. Thereby, the gas with which the reference chamber is filled is introduced via an opening in a separate coating chamber only after bonding of the wafers forming the reference chamber. The reference chamber preferably contains MEMS devices.

In another aspect, the invention relates to a photoacoustic gas sensor comprising such a reference chamber within which a MEMS sensor is present.

Intravascular devices, systems, and methods are disclosed. In some embodiments, the intravascular devices are guide wires that include a capacitive pressure-sensing component disposed at a distal portion of the guide wire. Methods of making such intravascular devices, including various manufacturing and assembling techniques, are disclosed. Systems associated with such intravascular devices and methods of using such devices and systems are also disclosed.

A force sensor comprises a first substrate, a second substrate, a third substrate, and a package body. The first substrate includes a fixed electrode, at least one first conductive contact, and at least one second conductive contact. The second substrate is disposed on the first substrate and electrically connected to the first conductive contact of the first substrate. The second substrate includes a micro-electro-mechanical system (MEMS) element corresponding to the fixed electrode. The third substrate is disposed on the second substrate and includes a pillar connected to the MEMS element. The package body covers the third substrate. The foregoing force sensor has better reliability.

A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.