Patent classifications
B81C1/00269
ANTENNA APPARATUS
The invention relates to antenna apparatus comprising: an antenna, a signal conductor and one or more RF MEMS switches, the antenna being conductively connected to the signal conductor, the MEMS switches and at least a portion of the signal conductor being supported by a crystalline MEMS substrate; and a capping substrate comprising a capping portion, wherein an enclosed volume is formed around the said MEMS switches between the capping portion and at least a portion of the crystalline MEMS substrate, and wherein the capping substrate comprises the said antenna.
Preconditioning to enhance hydrophilic fusion bonding
A method for fusion bonding a pair of substrates together with silane preconditioning is provided. A surface of a first oxide layer or a surface of a second oxide layer is preconditioned with silane. The first and second oxide layers are respectively arranged on first and second semiconductor substrates. Water is applied to the surface of the first or second oxide layer. The surfaces of the first and second oxide layers are brought in direct contact. The first and second oxide layers are annealed. A method for manufacturing a microelectromechanical systems (MEMS) package using the fusion bonding is also provided.
Thermocompression bonding of electronic components
A method for producing an electronic module includes providing a first substrate including at least one first electrical contacting surface, an electronic component including at least one second electrical contacting surface, and a first material layer made of a thermoplastic material including at least one recess extending through the material layer. The first substrate, the electronic component and the first material layer are arranged with the first material layer disposed between the first substrate and the electronic component, and the at least one first electrical contacting surface, the at least one second electrical contacting surface and the at least one recess aligned relative to one another. The first substrate, the electronic component and the material layer are thermocompression bonded. A joint formed between the at least one first electrical contacting surface and the at least one second electrical contacting surface is surrounded or enclosed by the first material layer.
BOND RINGS IN SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME
An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.
Symmetrical MEMS accelerometer and its fabrication process
A symmetrical MEMS accelerometer. The accelerometer includes a top half and a bottom half bonded together to form the frame and the mass located within the frame. The frame and the mass are connected through resilient beams. A plurality of hollowed parts and the first connecting parts are formed on the top and bottom side of the mass, respectively. The second connecting parts are formed on the top and bottom side of the frame, respectively. The resilient beams connect the first connecting part with the second connecting part. Several groups of comb structures are formed on top of the hollowed parts. Each comb structure includes a plurality of moveable teeth and fixed teeth. The moveable teeth extend from the first connecting part and the fixed teeth extend from the second connecting part. Capacitance is formed between the movable teeth and the fixed teeth. Since the accelerometer is symmetrical with a large mass, it has a large capacitance with a low damping force.
METHOD FOR BONDING WAFERS
Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.
Components with backside adhesive layers
A component source wafer comprises printable components having adhesive disposed on a backside of the printable components. A wafer substrate comprises a sacrificial layer having recessed portions and anchors. A component is disposed entirely over each recessed portion. A tether physically connects each component to at least one of the anchors. A layer of adhesive is disposed on a side of the component adjacent to the recessed portion. Each component is suspended over the wafer substrate and the recessed portion defines a gap separating the component from the wafer substrate.
RESONANCE DEVICE AND RESONANCE DEVICE MANUFACTURING METHOD
A resonance device that includes a MEMS substrate including a resonator, an upper lid that seals a vibration space of the resonator, and a ground portion positioned between the MEMS substrate and the upper lid, the ground portion being extended to an inside of the upper lid and electrically connected to the upper lid.
Semiconductor device package and a method of manufacturing the same
A semiconductor device package includes a carrier, a semiconductor device, a lid, a conductive post, a first patterned conductive layer, a conductive element disposed between the first conductive post and the first patterned conductive layer, and an adhesive layer disposed between the lid and the carrier. The conductive post is electrically connected to the first patterned conductive layer. The semiconductor device is electrically connected to the first patterned conductive layer. The lid is disposed on the carrier, and the lid includes a second patterned conductive layer electrically connected to the first conductive post.
MICRO-ACOUSTIC WAFER-LEVEL PACKAGE AND METHOD OF MANUFACTURE
A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.