Patent classifications
B81C1/00325
Encapsulated device of semiconductor material with reduced sensitivity to thermo-mechanical stresses
An encapsulated device of semiconductor material wherein a chip of semiconductor material is fixed to a base element of a packaging body through at least one pillar element having elasticity and deformability greater than the chip, for example a Young's modulus lower than 300 MPa. In one example, four pillar elements are fixed in proximity of the corners of a fixing surface of the chip and operate as uncoupling structure, which prevents transfer of stresses and deformations of the base element to the chip.
Method of stress relief in anti-reflective coated cap wafers for wafer level packaged infrared focal plane arrays
Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.
STRUCTURES FOR PACKAGING STRESS-SENSITIVE MICRO-ELECTRO-MECHANICAL SYSTEM STACKED ONTO ELECTRONIC CIRCUIT CHIP
A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.
METHOD FOR MANUFACTURING A MICROMECHANICAL SENSOR
A method for manufacturing a micromechanical sensor, including the steps: providing a MEMS wafer that includes a MEMS substrate, a defined number of etching trenches being formed in the MEMS substrate in a diaphragm area, the diaphragm area being formed in a first silicon layer that is situated at a defined distance from the MEMS substrate; providing a cap wafer; bonding the MEMS wafer to the cap wafer; and forming a media access point to the diaphragm area by grinding the MEMS substrate.
Fabrication method for a MEMS device
A Microelectromechanical Systems (MEMS) device combining a MEMS layer and a Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuit (IC), and its fabrication method is provided. The fabrication method includes: processing the MEMS layer on a first semiconductor substrate, the MEMS layer including one or more movable structures and one or more anchor structures; processing one or more first contacts on the first semiconductor substrate, each first contact being processed into one of the anchor structures and being configured to bias that anchor structure; processing the CMOS IC on a second semiconductor substrate; processing one or more second contacts on the second semiconductor substrate, each second contact being connected to the CMOS IC; and bonding the first semiconductor substrate to the second semiconductor substrate such that each first contact directly contacts one of the second contacts. The method can allow fabricating the MEMS device without vapor HF etching. The method can further enable zero level packaging, fusion bonding, a C-SOI approach, and high-vacuum sealing. An integrated zero level hermetic packaging MEMS device can be realized based on fusion bonding of moisture resistant materials. Further, Cu/dielectric bonding and electrical connections to individual parts of the MEMS device are allowed, in order to apply isolated voltages.
Stress isolated device package and method of manufacture
A device package includes a die that includes a substrate having first and second surfaces. A sensor is formed at a sensor region of the first surface. A trench extends entirely through the substrate between the first and second surfaces, in which the trench at least partially surrounds the sensor region. An isolation material, formed at the first surface, may extend across the trench A ring structure is coupled to the first surface of the substrate to create a first cavity in which the sensor is contained, the ring structure being laterally displaced away from and surrounding the sensor region and the trench. A molded compound body may abut an outer wall of the ring structure. The molded compound body has a second cavity that is concentric with the first cavity to enable fluid communication between the sensor and an environment external to the device package.
Method of manufacturing a sensor device and moulding support structure
A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106). The moulding compound is then introduced (110) into the packaging mould during a predetermined period of time (112) so that the moulding compound fills the predetermined pathways, thereby filling the second notional volume and surrounding the elongate sensor element within the second notional volume without contacting the elongate sensor element.
Wafer level packaging for MEMS device
A microelectromechanical system (MEMS) device is disclosed. The MEMS device includes a device substrate with a top device surface and a bottom device surface having a MEMS component in a device region. A top device bond ring is disposed on the top device surface surrounding the device region and a bottom device bond ring is disposed on the bottom device surface surrounding the device region. A top cap with a top cap bond ring is bonded to the top device bond ring by a top eutectic bond and a bottom cap with a bottom cap bond ring is bonded to the bottom device bond ring by a bottom eutectic bond. The eutectic bonds encapsulate the MEMS device.
ELECTRONIC SENSORS WITH SENSOR DIE IN PACKAGE STRUCTURE CAVITY
Described examples include sensor apparatus and integrated circuits having a package structure with an internal cavity and an opening that connects of the cavity with an ambient condition of an exterior of the package structure, and an electronic sensor structure mechanically supported by wires in the cavity and including a sensing surface exposed to the cavity to sense the ambient condition of an exterior of the package structure.
WAFER LEVEL PACKAGING FOR MEMS DEVICE
A microelectromechanical system (MEMS) device is disclosed. The MEMS device includes a device substrate with a top device surface and a bottom device surface having a MEMS component in a device region. A top device bond ring is disposed on the top device surface surrounding the device region and a bottom device bond ring is disposed on the bottom device surface surrounding the device region. A top cap with a top cap bond ring is bonded to the top device bond ring by a top eutectic bond and a bottom cap with a bottom cap bond ring is bonded to the bottom device bond ring by a bottom eutectic bond. The eutectic bonds encapsulate the MEMS device.