A method for producing microelectromechanical structures. The method includes: providing a carrier substrate having a central layer, and an insulation layer which is disposed on one side of the central layer and is applied to the surface; applying a silicon layer to the insulation layer; structuring the silicon layer forming trenches through the silicon layer in places; passivating the silicon layer, wherein the trenches are filled and a passivation layer forms; structuring the passivation layer, sacrificial regions and functional regions being formed, the sacrificial regions being free of the passivation layer in places; removing part of the carrier substrate forming a new surface; forming a second insulation layer on the new surface; repeating the applying, structuring and passivating for a second silicon layer on the second insulation layer and structuring for a second passivation layer to form sacrificial regions and functional regions and removing all of the sacrificial regions.

A process for manufacturing a microelectromechanical mirror device includes, in a semiconductor wafer, defining a support frame, a plate connected to the support frame so as to be orientable around at least one rotation axis, and cantilever structures extending from the support frame and coupled to the plate so that bending of the cantilever structures causes rotations of the plate around the at least one rotation axis. The process further includes forming piezoelectric actuators on the cantilever structures, forming pads on the support frame, and forming spacer structures protruding from the support frame more than both the pads and the stacks of layers forming the piezoelectric actuators.