The disclosure provides methods and apparatus for release-assisted microcontact printing of MEMS. Specifically, the principles disclosed herein enable patterning diaphragms and conductive membranes on a substrate having articulations of desired shapes and sizes. Such diaphragms deflect under applied pressure or force (e.g., electrostatic, electromagnetic, acoustic, pneumatic, mechanical, etc.) generating a responsive signal. Alternatively, the diaphragm can be made to deflect in response to an external bias to measure the external bias/phenomenon. The disclosed principles enable transferring diaphragms and/or thin membranes without rupturing.

A mirror device includes a frame body, a mirror configured to tilt about a Y-axis with respect to the frame body, a fixed inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction along the Y-axis and provided at the frame body, and a movable inner comb electrode including a plurality of electrode fingers arranged in the arrangement direction and provided at the mirror, the electrodes fingers of the fixed inner comb electrode and the movable inner comb electrode being alternately arranged. The mirror includes a mirror body and an extension extending from the mirror body. Some of the electrode fingers of the movable inner comb electrode are provided at the mirror body, and another electrode fingers of the movable inner comb electrode are provided at the extension.

A method for manufacturing a millimeter scale electromechanical device includes coupling a stainless steel ply to a polymer carrier ply, coating the stainless steel ply in a photo resist material, masking the photoresist material, exposing the photoresist material to cure a portion of the photoresist material, developing the photoresist material to remove uncured photoresist material from the stainless steel ply, chemically etching the stainless steel ply to remove a patterned portion of the stainless steel ply, dissolving the polymer carrier ply to release unwanted chips of the stainless steel ply, and adhering the patterned stainless steel ply to a flexible material ply to form a sub-laminate.

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The method includes providing a composite photoresist material that includes: (a) a first photoresist layer derived from a photoresist resin having a first chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density and (b) at least a second photoresist layer derived from a photoresist resin having a second chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first chemical property. The composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material and the composite photoresist material has varying mechanical and/or physical properties through a thickness of the 3D structure.

Examples disclose a semiconductor package including a semiconductor chip, an encapsulation, and a metal structure. The semiconductor chip is at least partially embedded in the encapsulation. The metal structure is formed on an outer surface of the encapsulation and includes a floating portion. The floating portion is floating on the encapsulation and the metal structure is electrically coupled with the semiconductor chip. Further examples disclose a method for manufacturing a semiconductor package, the method including providing a semiconductor chip at least partially embedded in an encapsulation; providing a metal structure on the encapsulation; forming a floating portion of the metal structure by forming a recess in the encapsulation.

The present invention relates to novel nano- and micro-electromechanical devices and novel methods of preparing them. In one aspect, the invention includes methods of preparing a nanodevice. In certain embodiments, the methods comprise coating a polymer layer with a first at least one thin solid material layer using atomic layer deposition (ALD), thus forming an ALD-generated layer. In other embodiments, the methods comprise patterning the first at least one thin solid material layer to form a nanodevice. In yet other embodiments, the methods comprise releasing the nanodevice from the polymer layer.

Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called MEMS last fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.

Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.

The present disclosure relates to the technical field of cutting machining, and discloses a cross-scale structure feature surface machining method based on a multi-component collaborative vibration. A vibration in a z-axis direction is applied to a servo movement mechanism to realize the cutting of a micron-scale structure and the adjustment of the cutting depth; and the vibration in the z-axis direction is applied to a three-axis movement platform to realize the cutting of a millimeter-scale structure and the adjustment of the cutting depth. A required cross-scale structure feature surface can be machined and formed at one time through a collaborative vibration among a vibrating tool, a servo movement mechanism, and/or a three-axis movement platform according to the structure type contained in the required cross-scale structure, which can simplify a process flow and improve the machining efficiency, and has high economic efficiency.