A multiple silicon trenches forming method and an etching mask structure, the method comprises: step S11, providing a MEMS sealing cap silicon substrate (100); step S12, forming n stacked mask layers (101, 102, 103) on the MEMS sealing cap silicon substrate (100), after forming each mask layer, photolithographing and etching the mask layer and all other mask layers beneath the same to form a plurality of etching windows (D1, D2, D3); step S13, etching the MEMS sealing cap silicon substrate by using the current uppermost mask layer and a layer of mask material beneath the same as a mask; step S14, removing the current uppermost mask layer; step S15, repeating the step S13 and the step S14 until all the n mask layers are removed. The present invention can form a plurality of deep trenches with high aspect ratio on the MEMS sealing cap silicon substrate using conventional semiconductor processes, avoiding the problem that the conventional spin coating cannot be conducted on a sealing cap wafer with deep trenches using photoresist.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The method includes providing a composite photoresist material that includes: (a) a first photoresist layer derived from a photoresist resin having a first chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density and (b) at least a second photoresist layer derived from a photoresist resin having a second chemical property selected from the group consisting of epoxide equivalent weight, aromatic content, and crosslink density different from the first chemical property. The composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material and the composite photoresist material has varying mechanical and/or physical properties through a thickness of the 3D structure.

A micro-electromechanical system (MEMS) device includes a movable comb structure located in a cavity within an enclosure, and a stationary structure affixed to the enclosure. The movable comb structure includes a comb shaft portion and movable comb fingers laterally protruding from the comb shaft portion. The movable comb structure includes a metallic material portion. The movable structure and the stationary structure are configured to generate an electrical output signal based on lateral movement of the movable structure relative to the stationary structure.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A semiconductor device is proposed. The semiconductor device comprises a membrane structure having an opening. Furthermore, the semiconductor device comprises a first backplate structure, which is arranged on a first side of the membrane structure, and a second backplate structure, which is arranged on a second side of the membrane structure. The semiconductor device furthermore comprises a vertical connection structure, which connects the first backplate structure to the second backplate structure. In this case, the vertical connection structure extends through the opening.

An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.