A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.

A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.

The invention relates to a method of manufacturing a structured grating, a corresponding structured grating component (1) and an imaging system. The method comprising the steps of: providing (110, 120, 130) a catalyst (30) on a substrate (20), the catalyst (20) having a grating pattern; growing (140) nanostructures (50) on the catalyst (30) so as to form walls (52) and trenches (54) based on the grating pattern; and filling (160) the trenches (54) between the walls (52) of nanostructures (50) using an X-ray absorbing material (70). The invention provides an improved method for manufacturing a structured grating and such structured grating component (1), which is particularly suitable for dark-field X-ray imaging or phase-contrast imaging.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method comprises: patterning a substrate, including a conductive region, with photoresist exposed by lithography, where the substrate is mounted on a handle substrate; forming a comb structure with conductive fingers on the substrate by at least removing a portion of the conductive region of the substrate; removing the photoresist; forming, one atomic layer at a time, at least one atomic layer of at least one conductor over at least one sidewall of each conductive finger; attaching at least one insulator layer to the comb structure, and the substrate from which the comb structure is formed; and removing the handle substrate.

Elements of photonic devices with high aspect ratio patterns are fabricated. A stabilizing catalyst that forms a stable metal-semiconductor alloy allows to etch a substrate in vertical direction even at very low oxidant concentration without external bias or magnetic field. A metal layer on the substrate reacts with the oxidant contained in air and catalyzes the semiconductor etching by the etchant. Air in continuous flow at the metal layer allows to maintain constant the oxidant concentration in proximity of the metal layer. The process can continue for a long time in order to form very high aspect ratio structures in the order of 10,000:1. Once the etched semiconductor structure is formed, the continuous air flow supports the reactant species diffusing through the etched semiconductor structure to maintain a uniform etching rate. The continuous air flow supports the diffusion of reaction by-products to avoid poisoning of the etching reaction.

A gyro sensor includes a plurality of beams connected via a turnaround part. A groove is provided on a main surface of at least one beam of the plurality of beams. Wall thicknesses on the main surface of two sidewalls facing each other of the groove in a direction orthogonal to a longitudinal direction of the beam satisfy 0.9≤T1/T2≤1.1, where T1 is the wall thickness of one sidewall and T2 is the wall thickness of the other sidewall.

An electrostatic transducer includes a substrate oriented in a plane, a fixed electrode supported by the substrate, and a moveable electrode supported by the substrate, spaced from the fixed electrode in a first direction parallel to the plane, and configured for movement in a second direction transverse to the plane, such that an extent to which the fixed and moveable electrodes overlap changes during the movement. The fixed and moveable electrodes comprise one or more of a plurality of conductive layers, the plurality of conductive layers including at least three layers. The fixed electrode includes a stacked arrangement of two or more spaced apart conductive layers of the plurality of conductive layers.

The invention relates to a method of manufacturing a structured grating, a corresponding structured grating component (1) and an imaging system. The method comprising the steps of: providing (110, 120, 130) a catalyst (30) on a substrate (20), the catalyst (20) having a grating pattern; growing (140) nanostructures (50) on the catalyst (30) so as to form walls (52) and trenches (54) based on the grating pattern; and filling (160) the trenches (54) between the walls (52) of nanostructures (50) using an X-ray absorbing material (70). The invention provides an improved method for manufacturing a structured grating and such structured grating component (1), which is particularly suitable for dark-field X-ray imaging or phase-contrast imaging.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.