B81C1/00626

Additive manufacturing methods for modification and improvement of the surfaces of micro-scale geometric features

The present disclosure addresses methods to refine the geometry of micro features manufactured in various substrates. Such refinement includes improvement in edge roughness and roughness of aperture channel walls. The methods include deposition of material onto feature edges and surfaces as well as placement of micro fabricated inserts into coarse features. Foremost among the candidate technologies that can be employed for these purposes are two photon polymerization-based 3D nano printing and atomic force microscope nanopipette-based electroplating.

MICROMACHINED SUPERCONDUCTING INTERCONNECT IN SILICON
20230391609 · 2023-12-07 ·

A microelectromechanical system (MEMS) device and method of fabrication are provided. The MEMS devices includes a silicon substrate. The silicon substrate includes a top surface. An interconnect is machined from the silicon substrate. The interconnect includes at a spring body that has least two spring arms. Each spring arm includes a first end distal from a center of the interconnect, a second end proximate the center of the interconnect, and a single turn of a constant curvature. Each spring arm is configured to move rotationally in a plane parallel to the top surface of the silicon substrate.

MEMS element

According to one embodiment, a MEMS element includes a base body, a supporter, a film part, a first electrode, a second electrode, and an insulating member. The supporter is fixed to the base body. The film part is separated from the base body in a first direction and supported by the supporter. The first electrode is fixed to the base body and provided between the base body and the film part. The second electrode is fixed to the film part and provided between the first electrode and the film part. The insulating member includes a first insulating region and a second insulating region. The first insulating region is provided between the first electrode and the second electrode. A first gap is provided between the first insulating region and the second electrode. The second insulating region does not overlap the first electrode in the first direction.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Planar cavity mems and related structures, methods of manufacture and design structures

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

METHOD FOR SELECTIVE ETCHING OF NANOSTRUCTURES
20210175087 · 2021-06-10 ·

The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

PRODUCTION METHOD FOR A MICROMECHANICAL DEVICE HAVING INCLINED OPTICAL WINDOWS, AND MICROMECHANICAL DEVICE HAVING INCLINED OPTICAL WINDOWS
20210198102 · 2021-07-01 ·

A production method for a micromechanical device having inclined optical windows. First and second substrates are provided. A plurality of through-holes is produced in the first and second substrate such that for each through-hole in the first substrate a congruent through-hole is produced in the second substrate, which overlap when the first substrate is placed over the second substrate. A slanted edge region is produced around a respective through-hole in the first and second substrate, the edge region being inclined at a window angle, two slanted edge regions situated on top of each other being congruent in a top view and being inclined at the same window angle. A window foil is provided having a structured window region, which covers the through-hole in a top view of the window foil in each case, the window foil forming an optical window slanted at the window angle above the respective through-hole.

Device comprising a micro-electro-mechanical system substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor substrate

A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.