The present application relates to a laminate, a method for preparing same and a use of the laminate. The present application can provide a method for forming a film, which comprises a self-assembled block copolymer, to have excellent uniformity in thickness even when the film is formed over a large area, a laminate comprising a polymer film formed by means of the method, and a use of same.

A method for manufacturing a protective wafer including a frame wafer and an optical window, and to a method for manufacturing a micromechanical device including such a protective wafer having an inclined optical window. Also described are a protective wafer including a frame wafer and an optical window, and a micromechanical device including a MEMS wafer and such a protective wafer, which delimit a cavity, the protective wafer including an inclined optical window.

A semiconductor wafer has formed within it a plurality of piston tops of equal area. Each of the piston tops includes a thin flat region from which a majority of the thickness of the original semiconductor wafer may have been removed. A first one of the piston tops has a lower thickness than a second one of the piston tops. The second piston top has at least one hole in it, the volume of the hole corresponding to the difference in thickness between the first and second piston tops, such that the masses of the first and second piston tops differ by less than the variation in thickness between them.

The present invention relates to a method for selective etching of a nanostructure (10). The method comprising: providing the nanostructure (10) having a main surface (12) delimited by, in relation to the main surface (12), inclined surfaces (14); and subjecting the nanostructure (10) for a dry etching, wherein the dry etching comprises: subjecting the nanostructure (10) for a low energy particle beam (20) having a direction perpendicular to the main surface (12); whereby a recess (16) in the nanostructure (10) is formed, the recess (16) having its opening at the main surface (12) of the nanostructure (10).

The present invention provides a manufacturing method for MEMS structure. The method includes steps of: S1: providing a substrate, including a structural layer and a silicon-based layer overlapped with the structural layer; S2: carrying out a main etching process for etching out a cavity hole from an end of the silicon-based layer, which is far away from the structural layer, in a direction toward the structural layer until the cavity hole contacts the structural layer; and S3: carrying out an over-etching process for deepening the cavity hole and control an included angle between a side wall of the cavity hole and the structural layer to be larger than 10 but smaller than 90. The invention also provides a MEMS structural and a MEMS microphone manufactured by the method.

In accordance with an embodiment, a microelectromechanical transducer includes a displaceable membrane having an undulated section comprising at least one undulation trough and at least one undulation peak and a plurality of piezoelectric unit cells. At least one piezoelectric unit cell is provided in each case in at least one undulation trough and at least one undulation peak, where each piezoelectric unit cell has a piezoelectric layer and at least one electrode in electrical contact with the piezoelectric layer. The membrane may be formed as a planar component having a substantially larger extent in a first and a second spatial direction, which are orthogonal to one another, than in a third spatial direction, which is orthogonal to the first and the second spatial direction and defines an axial direction of the membrane.

According to one embodiment, a MEMS element includes a base body, a supporter, a film part, a first electrode, a second electrode, and an insulating member. The supporter is fixed to the base body. The film part is separated from the base body in a first direction and supported by the supporter. The first electrode is fixed to the base body and provided between the base body and the film part. The second electrode is fixed to the film part and provided between the first electrode and the film part. The insulating member includes a first insulating region and a second insulating region. The first insulating region is provided between the first electrode and the second electrode. A first gap is provided between the first insulating region and the second electrode. The second insulating region does not overlap the first electrode in the first direction.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

The present disclosure addresses methods to refine the geometry of micro features manufactured in various substrates. Such refinement includes improvement in edge roughness and roughness of aperture channel walls. The methods include deposition of material onto feature edges and surfaces as well as placement of micro fabricated inserts into coarse features. Foremost among the candidate technologies that can be employed for these purposes are two photon polymerization-based 3D nano printing and atomic force microscope nanopipette-based electroplating.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.