A microelectromechanical mirror device has, in a die of semiconductor material: a fixed structure defining a cavity; a tiltable structure carrying a reflecting region, elastically suspended above the cavity and having a main extension in a horizontal plane; at least one first pair of driving arms, carrying respective piezoelectric structures which can be biased to generate a driving force that causes rotation of the tiltable structure about a rotation axis parallel to a first horizontal axis of the horizontal plane; elastic suspension elements, which elastically couple the tiltable structure to the fixed structure at the rotation axis and are rigid to movements out of the horizontal plane and compliant to torsion about the rotation axis. In particular, the driving arms of the first pair are magnetically coupled to the tiltable structure to cause its rotation about the rotation axis by magnetic interaction, following biasing of the respective piezoelectric structures.

A MEMS sensor, including a substrate, and at least three functional layers, which are connected to the substrate on top of one another and spaced apart from one another. A first of the at least three functional layers is deflectably situated. A first electrode, which includes at least two areas being situated at the first functional layer. A first area of the first electrode together with a second electrode of a second of the at least three functional layers form a first capacitance, and a second area of the first electrode together with at least one area of a third electrode of a third functional layer form a second capacitance. The electrodes are situated in such a way that, upon a change in the distance of the electrodes of the first capacitance, a contrary change in the distance of the electrodes of the second capacitance takes place. In this way a micromechanical sensor including capacitive evaluation as a differential capacitor is made possible, so that an output signal of the MEMS sensor may be provided across the entire measurement range in a manner that is linearly dependent on the deflection.

A MEMS device includes a body pivoting around a pivot axis, a support, and a suspension structure mechanically coupling the body to the support. The suspension structure includes a torsion element defining the pivot axis, and first and second spring elements extending with an angle relative to the pivot axis on opposing sides of the torsion element so that a distance between at least portions of the first and second spring elements is changing in the direction of the pivot axis. The extension of the first and second spring elements in the direction of the pivot axis is larger than the extension of the torsion element in the direction of the pivot axis.

There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching.

A MEMS acoustic sensor includes a substrate, a back plate, a diaphragm, a dielectric layer and a connecting portion. The diaphragm is disposed between the substrate and the back plate and includes a vibration portion. The dielectric layer is formed between the substrate and the diaphragm and has a cavity corresponding to the vibrating portion. The connecting portion is located in the cavity and connects the vibrating portion and the substrate.

The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

A micromechanical component for a sensor device including a substrate having a substrate surface, at least one stator electrode situated on the substrate surface and/or on the at least one intermediate layer covering at least partially the substrate surface, which is formed in each case from a first semiconductor and/or metal layer, at least one adjustably situated actuator electrode, which is formed in each case from a second semiconductor and/or metal layer, and a diaphragm spanning the at least one stator electrode and the at least one actuator electrode, including a diaphragm exterior side directed away from the at least one stator electrode, which is formed from a third semiconductor and/or metal layer, a stiffening and/or protective structure protruding at the diaphragm exterior side being formed from a fourth semiconductor and/or metal layer.

A MEMS microphone includes a substrate having a cavity, a back plate being disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, the diaphragm being spaced apart from the substrate and the back plate, covering the cavity to form an air gap between the back plate, and being configured to generate a displacement with responding to an acoustic pressure and a plurality of anchors extending from an end portion of the diaphragm to be integrally formed with the diaphragm, the anchors being arranged along a circumference of the diaphragm to be spaced apart from each other, and having lower surfaces making contact with an upper surface of the substrate to support the diaphragm. Thus, the MEMS microphone may have improved rigidity and flexibility.

There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching.

The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.