Patent classifications
B81C1/00674
MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES
A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.
MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES
A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.
RELIABLE DEPOSITION OF THIN PARYLENE
Apparatus, system, and method of depositing thin and ultra-thin parylene are described. In an example, a core deposition chamber is used. The core deposition chamber includes a base and a rigid, removable cover configured to mate and seal with the base to create the core deposition chamber and to define an inside and an outside of the core deposition chamber. The core deposition chamber also includes a conduit through a top of the cover. The conduit has a lumen connecting the inside to the outside of the core deposition chamber. The lumen has a length and a cross-section. The cross-section has a width between 50 m and 6000 m. The length is less than 140 times the cross-section width. The core deposition chamber can be placed in an outer deposition chamber and can achieve parylene deposition less than 1 m thick inside the core deposition chamber.
MEMS grid for manipulating structural parameters of MEMS devices
A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.
MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES
A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.
MICROMECHANICAL TIMEPIECE PART COMPRISING A LUBRICATED SURFACE AND METHOD FOR PRODUCING SUCH A MICROMECHANICAL TIMEPIECE PART
The invention relates to a micromechanical timepiece part comprising a silicon-based substrate (1) having at least one surface, at least one part of said surface having pores (2) which open out at the external surface of the micromechanical timepiece part and comprise a tribological agent (5).
The invention likewise relates to a method for producing a micromechanical timepiece part starting from a silicon-based substrate (1), said silicon-based substrate having at least one surface, at least one part of which is lubricated by a tribological agent (5), said method comprising, in order, the steps of: a) forming pores (2) on the surface of the part of said surface of said silicon-based substrate (1), b) depositing said tribological agent (5) in said pores (2).
SENSOR ELEMENT, METHOD FOR MANUFACTURING SENSOR ELEMENT, DETECTION DEVICE, AND METHOD FOR MANUFACTURING DETECTION DEVICE
There is provided a sensor element including: a semiconductor base member having a first main surface and a second main surface located opposite to the first main surface, and having a cavity structure formed on the second main surface side; and a detection element formed on the first main surface side in a region where the cavity structure is formed, the second main surface of the semiconductor base member including a convexly and concavely shaped portion, and a tip of a convex portion of the convexly and concavely shaped portion having a curved shape.
Semiconductor structure and method of manufacturing the same
A semiconductor structure is provided. The semiconductor structure includes a substrate, a pillar structure, a fin structure, and a buffering structure. The pillar structure is disposed on the substrate. The fin structure is connected to the pillar structure and is separate from the substrate. The buffering structure is disposed in the fin structure and includes a soft material layer and an air gap surrounded by the soft material layer. A method of manufacturing the semiconductor structure is also provided.
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
A semiconductor structure includes a substrate, a fixed member disposed on the substrate, a floating member connected to the fixed member, and a buffering structure disposed in the floating member. The floating member is separated from the substrate. The floating member includes a first conductive layer and a second conductive layer over the first conductive layer. The buffering structure includes a soft material layer and an air gap surrounded by the soft material layer. The second conductive layer is separated from the air gap.