A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.

The invention relates to a method for the surface modification of microstructured components having a polar surface, in particular for high-pressure applications. According to said method, a microstructured component is contacted, in particular treated, with a modification reagent, the surface properties of said component being modified by chemical and/or physical interaction of the component surface and of the modification reagent.

An integrated circuit and the method to produce the integrated circuit comprising: a substrate (10); active devices (11); plurality of metal layers (17), wherein said metal layers are separated by dielectric layers (13) and connected to each other by plurality of vias (19); at least one micromechanical region (15) wherein some of the dielectric layers are removed leaving hollow spaces (23), thereby some of said metal and via layers form a micromechanical device in said micromechanical region, wherein said micromechanical device comprises at least one multi-layer structure (165) that is built of a plurality of metal layers and at least one via layer and said multi-layer structure is characterized by that at least two metal layers of said multi-layer structure are joined by at least one modified via (41).

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

An integrated circuit and the method to produce the integrated circuit comprising: a substrate (10); active devices (11); plurality of metal layers (17), wherein said metal layers are separated by dielectric layers (13) and connected to each other by plurality of vias (19); at least one micromechanical region (15) wherein some of the dielectric layers are removed leaving hollow spaces (23), thereby some of said metal and via layers form a micromechanical device in said micromechanical region, wherein said micromechanical device comprises at least one multi-layer structure (165) that is built of a plurality of metal layers and at least one via layer and said multi-layer structure is characterised by that at least two metal layers of said multi-layer structure are joined by at least one modified via (41).

The present invention relates to a cantilever or membrane comprising a body and an elongated beam attached to the body. The elongated beam includes a first layer comprising a first material, a second layer comprising a second material having an elastic modulus different to that of the first material, a third layer comprising a third material having an elastic modulus different to that of the first material, where the first layer is sandwiched between the second layer and the third layer.

Embodiments provide a MEMS (Micro Electro Mechanical System) pressure sensor comprising a semiconductor substrate, wherein the semiconductor substrate comprises a stress decoupling structure adapted to stress decouple a first portion of the semiconductor substrate from a second portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate comprises a first buried empty space, wherein the second portion of the semiconductor substrate comprises a second buried empty space, and wherein the semiconductor substrate comprises a pressure channel fluidically connecting the first buried empty space and the second buried empty space.

A micromechanical structure is described, including: at least one elastically deformable first area, which includes a defined piezoelectrically doped second area, at least in sections; at least one fourth area, into which the electrical charges generated in the second area may be conducted; and at least one third area connected electrically to the second and fourth area, in which an electrical current flowing through is convertible into thermal energy.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.