In a method of treating a semiconductor substrate, a plurality of active regions and a plurality of trench isolation regions are formed by selectively etching the semiconductor substrate. The semiconductor substrate is washed by providing deionized water to the semiconductor substrate. A silicon-based solution is provided to the semiconductor substrate by replacing the deionized water disposed on the semiconductor substrate with the silicon-based solution. A silicon oxide material is formed from the silicon-based solution by performing a heat treatment on the silicon-based solution and the semiconductor substrate. The silicon oxide material fills the trench isolation regions.

The present invention relates to semiconductor devices, such as microelectromechanical (MEMS) devices, with improved resilience during manufacturing. In one embodiment, a MEMS device includes a MEMS structure; a substrate situated parallel to the MEMS structure and positioned a first distance from the MEMS structure; and a bump stop structure formed on the substrate between the substrate and the MEMS structure, wherein the bump stop structure substantially traces a perimeter of the substrate, wherein the bump stop structure extends from the substrate to a second distance from the MEMS structure, and wherein the second distance is greater than zero and less than the first distance.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A method for manufacturing a micromechanical component, including: providing a MEMS wafer and a cap wafer; forming micromechanical structures in the MEMS wafer for at least two sensors; hermetically sealing the MEMS wafer with the cap wafer; forming a first access hole in a first cavity of a first sensor; introducing a defined first pressure into the cavity of the first sensor via the first access hole; closing the first access hole; forming a second access hole in a second cavity of a second sensor; introducing a defined second pressure into the cavity of the second sensor via the second access hole; and closing the second access hole.

A method of attaching a MEMS die to a mounting surface includes coating an inside surface of a pressure port of a fluid inlet member with a layer of solder mask, the fluid inlet member having a first axial end, a second axial end, and a port opening of the pressure port formed in the second axial end of the fluid inlet member. A solder preform is disposed on the mounting surface of the fluid inlet member and a MEMS die is disposed on the solder preform. The solder preform is heated in a re-flow operation to attach the MEMS die to the mounting surface, wherein the solder mask within the pressure port prevents molten solder from entering the pressure port during the re-flow operation.

A cleaning and drying method of a semiconductor substrate capable of suppressing collapse or breakdown of a pattern which occur at the time of drying a cleaning solution after cleaning the substrate and decomposition of a resin at a bottom of the pattern, and capable of removing the cleaning solution with good efficiency without using a specific device.

The invention is a process for producing an electromechanical device including a movable portion that is able to deform with respect to a fixed portion. The process implements steps based on fabrication microtechnologies, applied to a substrate including an upper layer, an intermediate layer and a lower layer. These steps are: a) forming first apertures in the upper layer; b) forming an empty cavity in the intermediate layer, which step is referred to as a pre-release step because a central portion of the upper layer lying between the first apertures is pre-released; c) applying what is called a blocking layer to the upper layer, this layer covering the first apertures, the blocking layer and the central portion together forming a suspended microstructure above the empty cavity; d) producing a boundary trench in the suspended microstructure, so as to form, in this microstructure, a movable portion and a fixed portion, the movable portion forming a movable member of the electromechanical device.

A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.

A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.

A physical quantity sensor includes a base substrate; a movable unit which is provided so as to be displaced with respect to the base substrate by facing the base substrate; a first fixed electrode and a second fixed electrode which are disposed on the base substrate by facing the movable unit; and a plurality of protrusion portions which are disposed at a position overlapped with the movable unit in a planar view, on the movable unit side of the base substrate, in which the protrusion portion includes a conductive layer with the same potential as that of the first fixed electrode and the second fixed electrode, and an insulating layer which is provided on a side opposite to the base substrate with respect to the conductive layer.