A MEMS device including a fixed member and a movable member supported via a resilient body. The MEMS device includes an impact alleviation mechanism provided at a position where the movable member and the fixed member collide during operation. The impact alleviation mechanism includes a stopper provided to either the fixed member or the movable member and that protrude to be parallel between sides of the two members with at least one side edge fixed to the respective member. Moreover, the impact alleviation mechanism includes an elongate protruding member provided on the other of the fixed member and the movable member. The elongate protruding member and the stopper are configured such that as collision force increases between the movable member and the fixed member during operation, an abutment area of an outer edge position of the elongate protruding member approaches the fixed side edge of the stopper.

A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.

A microelectromechanical device includes a semi-flexible proof-mass comprising a primary part, a secondary part and a stiff spring suspending the primary part and the secondary part. The spring causes the parts to move as a single entity when the device is in its normal range. A first stopper structure stops the primary part. The proof-mass is configured to deform through deflection of the spring, when the device is subjected to a shock having a force that is beyond the normal operation range. While the shock causes motion of the proof-mass in one direction along an axis of movement, the spring is configured to cause a restoring force causing the secondary part of the proof-mass to be driven into a restoring motion in a direction opposite to motion along an axis caused by the shock. Momentum of the secondary part causes the primary part to dislodge from the first stopper structure.

A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

A semiconductor device and its manufacturing method, relating the semiconductor techniques. The semiconductor device manufacturing method comprises: providing a first semiconductor structure, wherein the first semiconductor structure comprises a first part comprising a plurality of films separated from each other, and a first bonding component on the first part; forming an anti-stick layer on the first part covering the plurality of films; providing a second semiconductor structure comprising a second part and a second bonding component on the second part; and bonding the first bonding component with the second bonding component, so that the first part is bonded to the second part. This inventive concept prevents the adhesion of neighboring films in a semiconductor device.

An inertial structure is elastically coupled through a first elastic structure to a supporting structure so as to move along a sensing axis as a function of a quantity to be detected. The inertial structure includes first and second inertial masses which are elastically coupled together by a second elastic structure to enable movement of the second inertial mass along the sensing axis. The first elastic structure has a lower elastic constant than the second elastic structure so that, in presence of the quantity to be detected, the inertial structure moves in a sensing direction until the first inertial mass stops against a stop structure and the second elastic mass can move further in the sensing direction. Once the quantity to be detected ends, the second inertial mass moves in a direction opposite to the sensing direction and detaches the first inertial mass from the stop structure.

A device is provided that includes a handle layer with at least one cavity and suspension structure, a patterned polycrystalline silicon (poly-Si) first device layer, where at least one structural element is suspended by the structure, and may include a seismic element. A second electrically insulating layer is present, followed by a second device layer of patterned single-crystal silicon (mono-Si) with at least one moveably suspended seismic element above the first layer. A cap layer finalizes the structure, with the handle layer, device layers, and the cap layer forming an enclosure's walls. The first and second insulating layers bond the handle and device layers. The enclosure includes at least one seismic element from the second device layer, and at least one static and moveable electrode for motion detection or causation, with the static electrode in the first device layer.

A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having an inertial transducer element formed in a multi-layer semiconductor structure, where the first inertial transducer element comprises a first monocrystalline semiconductor proof mass element and a second conductive electrode element separated from one another by an air sensing gap, and where at least a first sensing gap surface of the first monocrystalline semiconductor proof mass element is a first rough surface that has been selectively etched to reduce stiction between the first monocrystalline semiconductor proof mass element and the second conductive electrode element.

A method of manufacturing a MEMS device. The MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are exposed to fluorine to either: dope exposed ruthenium and reduce surface adhesive forces, form fluorinated Self-Assembled Monolayers on the exposed ruthenium surfaces, deposit a nanometer passivating film on exposed ruthenium, or alter surface roughness of the ruthenium. Due to the fluorine treatment, low resistance, durable contacts are present, and the contacts are less susceptible to stiction events.

The MEMS device includes a device wafer having a first principal surface and a second principal surface that is on the opposite side of to the first principal surface, a cap wafer facing the first principal surface of the device wafer, and a bonding layer bonding the device wafer and the cap wafer. The device wafer includes a device substrate having a cavity recessed in the Z direction from the first principal surface toward the second principal surface, a sensor unit that is positioned in the cavity and includes a fixed electrode and a movable electrode facing the fixed electrode, and a bump stopper that is disposed on a surface of the movable electrode, the surface being a surface on the side of the first principal surface, and that restricts displacement of the movable electrode in a direction moving closer to the cap wafer in the Z direction.