Disclosed is a micro pressure sensor including a plurality of modules that are operative over different ranges of pressure. The modules include a stack of at least two module layers, each module layer including a module body having walls that define a compartment and with the defined compartment partitioned into at least two sub-compartments, a port for fluid ingress or egress disposed in a first wall of the body, with remaining walls of the body being solid walls, a membrane affixed to a first surface of the module body covering the compartment, and an electrode affixed over a surface of the membrane.

A sensor device, such as a biosensor, may comprise a polymer substrate, which is structured so as to form sets of microneedles and respective vias. The microneedles extend, each, from a base surface of the substrate. Each of the vias extends through a thickness of the substrate, thereby forming a corresponding set of apertures on the base surface. Each of the apertures is adjacent to a respective one of the microneedles. The device further may comprise two or more electrodes, these including a sensing electrode and a reference electrode. Each electrode may comprise an electrically conductive material layer that coats a region of the substrate, so as to coat at least some of the microneedles and neighboring portions of said base surface. Related devices, apparatuses, and methods of fabrication and use of such devices may be provided.

An actuator layer of a MEMS sensor is be fabricated to include multi-level features, such as additional sense electrodes, vertical bump stops, or weighted proof masses. A sacrificial layer is deposited on the actuator layer such that locations are provided for the multi-level features to extend vertically from the actuator layer. After the multi-layer features are fabricated on the actuator layer the sacrificial layer is removed. Additional processing such as patterning of the actuator layer may be performed to provide desired functionality and electrical signals to portions of the actuator layer, including to the multi-level features.

A MEMS-micro-mirror (30) is provided comprising a mirror body (50) that is rotatably arranged in a mirror frame (60) around a rotation axis (58) extending in a plane defined by the mirror body. The rotation axis extends through a first and a second mutually opposite end-portion (51, 53) of the mirror body. The mirror has a reflective first main surface (55) and opposite said first main surface a second main surface (57) provided with a first and a second pair of reinforcement beams. The pair of reinforcement beams (91a, 91b) extends from the first end-portion (51) in mutually opposite directions away from the rotation axis. The second pair of reinforcement beams (93a, 93b) extends from the second end-portion (53) in mutually opposite directions away from the rotation axis. Reinforcement beams of said first pair extend towards respective ones of said second pair.

A method for deigning a low voltage capacitive micromachined ultrasonic transducer (CMUT) is provided. The method includes starting from a base silicon wafer includes starting with a N-type Silicon Wafer and growing base oxide by patterning with a metal mask over the base oxide, patterning with a Field Oxide (FOX) Mask over a copper (Cu) or Aluminium (Al) metal (M1) layer that is deposited over the base oxide, depositing polysilicon over the entire silicon wafer and doping the polysilicon with a donor species with a concentration approaching its respective solid solubility limit and subsequently depositing titanium (Ti) over the doped polysilicon that is deposited on the entire silicon wafer and subsequently depositing a dielectric layer. The dielectric layer is standalone Silicon Dioxide or in a stack with Hafnium Oxide or alternatively in a stack with Silicon Nitride or a suitable stack of high relative permittivity materials.

A device includes a substrate and an intermetal dielectric (IMD) layer disposed over the substrate. The device also includes a first plurality of polysilicon layers disposed over the IMD layer and over a bumpstop. The device also includes a second plurality of polysilicon layers disposed within the IMD layer. The device includes a patterned actuator layer with a first side and a second side, wherein the first side of the patterned actuator layer is lined with a polysilicon layer, and wherein the first side of the patterned actuator layer faces the bumpstop. The device further includes a standoff formed over the IMD layer, a via through the standoff making electrical contact with the polysilicon layer of the actuator and a portion of the second plurality of polysilicon layers and a bond material disposed on the second side of the patterned actuator layer.

A MEMS device is provided that includes a cap layer and a device layer. The cap layer includes a cap wafer made of electrically insulating material, and the device layer includes at least one seismic element. Moreover, the cap layer includes at least one silicon-filled portion at a first face of the cap layer facing the device layer, and at least one of said at least one silicon-filled portion includes a gap that locally increases distance from the cap layer to the at least one seismic element in the device layer.

A micro-electro-mechanical system (MEMS) package includes a wafer with an interconnect layer disposed thereon. A first device substrate including a first MEMS device and a second device substrate including a second MEMS device are laterally spaced apart from each other and disposed on the wafer. A first and a second bond seal rings are disposed below the first and the second device substrates, respectively, and both bonded to the interconnect layer. A first handle substrate includes a first cavity having a first pressure, and is bonded to the first device substrate. A second handle substrates includes a second cavity having a second pressure different from the first pressure, and is bonded to the second device substrate. A hole is disposed in the second bond seal ring for pressure adjustment in the second cavity.

A MEMS inertial sensor device, method of operation, and fabrication process are described wherein a MEMS inertial sensor and drive actuation units are coupled together in operational engagement, where the MEMS inertial sensor includes a substrate and a proof mass array positioned in spaced apart relationship above a surface of the substrate and constructed with a plurality of proof mass sub-structures which are each separately connected to the substrate with orthogonally disposed pairs of spring suspension structures and which are each rigidly connected to one or more adjacent proof mass sub-structures with one or more connector bars so that the plurality of proof mass sub-structures move as a single proof mass array that can operate at resonant frequencies of at least 100 kHz when oscillating in first and second orthogonal directions.

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.