Embodiments are disclosed for processing microelectronic workpieces to apply stress engineering to self-aligned multi-patterning (SAMP) processes. The disclosed processing methods utilize stress in a substrate in a SAMP process to improve resulting pattern parameters. Initially, a high stress film is deposited on the frontside and the backside of the substrate, and the high stress film provides biaxial stress to the substrate due to the deposition process for the high stress film. Next, a SAMP process is performed to form spacers in a spacer pattern. This spacer pattern is then transferred to underlying layers to form a patterned structure. The high stress film provides axial stress in at least one direction along a portion of the patterned structure during the pattern transfer thereby improving resulting pattern formation.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.

The present disclosure discloses a bipolar transistor type MEMS pressure sensor and a preparation method thereof. The bipolar transistor type MEMS pressure sensor includes a thin film, a cantilever beam and a bipolar transistor. The bipolar transistor includes a base region, a collector region and an emitter region. The base region is configured to sense deformation of the thin film through a change in resistance value. For the bipolar transistor type MEMS pressure sensor of the disclosure, sensitivity of the sensor can be effectively improved without changing the performance indicators such as the measurement range and nonlinearity. Meanwhile, the bipolar transistor is used as a pressure-sensitive element, so that temperature drift of the sensor can be effectively inhibited.

In a MEMS device, an oxide layer is disposed between first and second semiconductor layers and MEMS resonator is formed within a cavity in the first semiconductor layer. A first electrically conductive feature functionally coupled to the MEMS resonator is exposed at a surface of the first semiconductor layer, and an insulating region is exposed at the surface of the first semiconductor layer adjacent the first electrically conductive feature. A semiconductor cover layer is bonded to the surface of the first semiconductor layer to hermetically seal the MEMS resonator within the cavity. A second electrically conductive feature extends through the semiconductor cover layer to contact the first electrically conductive feature, and an isolation trench extends through the semiconductor cover layer to the insulating region to electrically isolate a conductive path formed by the first and second electrically conductive features.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

Embodiments are disclosed for processing microelectronic workpieces to apply stress engineering to self-aligned multi-patterning (SAMP) processes. The disclosed processing methods utilize stress in a substrate in a SAMP process to improve resulting pattern parameters. Initially, a high stress film is deposited on the frontside and the backside of the substrate, and the high stress film provides biaxial stress to the substrate due to the deposition process for the high stress film. Next, a SAMP process is performed to form spacers in a spacer pattern. This spacer pattern is then transferred to underlying layers to form a patterned structure. The high stress film provides axial stress in at least one direction along a portion of the patterned structure during the pattern transfer thereby improving resulting pattern formation.

A semiconductor component. The semiconductor component has a semiconductor substrate, an insulation layer, and a first monocrystalline silicon layer. The insulation layer is arranged on the semiconductor substrate, and the first monocrystalline silicon layer is arranged on the insulation layer and at least one first region that extends starting from the first monocrystalline silicon layer up to a surface of the semiconductor substrate. The at least one first region includes second monocrystalline silicon.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.