Patent classifications
B81C2201/0181
Micro-electro-mechanical system (MEMS) structures and design structures
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
Micro-electro-mechanical system (MEMS) structures and design structures
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
METHOD OF DEPOSITING NANOTWINNED NICKEL-MOLYBDENUM-TUNGSTEN ALLOYS
The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear. The as-deposited films can also be heat treated to modify the internal microstructure and attendant mechanical properties in a way that provides a desired balance of strength and toughness.
Microfluidic device with multi-level, programmable microfluidic node
The invention is directed to a microfluidic device, which comprises distinct, parallel levels, including a first level and a second level. It further includes: a first microchannel, a second microchannel, and a node. This node comprises: an inlet port, a cavity, a via, and an outlet port. The cavity is formed on the first level and is open on a top side. The inlet port is defined on the first level; it branches from the first microchannel and communicates with the cavity through an ingress thereof. The outlet port, branches to the second microchannel on the second level. The via extends from the bottom side of the cavity, down to the outlet port, so the cavity may communicate with the outlet port. In addition, the cavity comprises a liquid blocking element to prevent an aqueous liquid filling the inlet port to reach the outlet port.
Micro-electro-mechanical system (MEMS) structures and design structures
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
METAL AND/OR CERAMIC MICROLATTICE STRUCTURE AND ITS MANUFACTURING METHOD
A metal and/or ceramic microlattice structure, comprising an alternation of first layers and of second layers formed by tubes, and interlocking with each other in order to form open loops cooperating two by two in order to form nodes of an articulated/ball-joint nature.
Thin film metal silicides and methods for formation
The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt.sub.2Si, or Pt.sub.3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.
MICRO-NANO CHANNEL STRUCTURE, SENSOR AND MANUFACTURING METHOD THEREOF, AND MICROFLUIDIC DEVICE
A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate. The micro-nano channels have a high resolution or an ultra-high resolution, and have different sizes and shapes.
MICRO-ELECTRO MECHANICAL SYSTEM AND MANUFACTURING METHOD THEREOF
A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.
Microfabrication of omni-view peripheral scanning system
Embodiments of the disclosure provide methods for microfabricating an omni-view peripheral scanning system. One exemplary method may include separately fabricating a reflector and a scanning MEMS mirror, and then bonding the microfabricated reflector with the scanning MEMS mirror to form the omni-view peripheral scanning system. The microfabricated reflector may include a cone-shaped bottom portion, and a via hole across the cone-shaped bottom portion. The microfabricated scanning MEMS mirror may include a MEMS actuation platform and a scanning mirror supported by the MEMS actuation platform. The scanning MEMS mirror may face the cone-shaped bottom portion of the reflector when forming the omni-view peripheral scanning system.