A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

An implant arranged for integration into a skeletal bone of a patient, comprising: a body having at least one end, the body being arranged to substantially mimic a portion of a skeletal bone; wherein the at least one end includes an enlarged portion arranged to, in use, prevent migration of the implant into the flesh of a patient.

The damascene wiring structure includes a base including a main surface provided with a groove, an insulating layer including a first portion provided on an inner surface of the groove and a second portion provided on the main surface, a metal layer provided on the first portion, a wiring portion embedded in the groove, and a cap layer provided to cover the second portion, an end portion of the metal layer, and the wiring portion. A surface of a boundary part between the first portion and the second portion includes an inclined surface inclined with respect to a direction perpendicular to the main surface. The end portion of the metal layer enters between the cap layer and the inclined surface, and in the end portion, a first surface along the cap layer and a second surface along the inclined surface form an acute angle.

Low friction coating of the present invention includes a boron-doped zinc oxide thin film, wherein piezoelectric polarization in a vertical direction perpendicular to a film surface and a lateral direction horizontal to the film surface occurs and a magnitude of the piezoelectric polarization in the vertical direction is within 150 pm and a magnitude of the piezoelectric polarization in the lateral direction is within 100 pm at 90% or more of measurement points. This makes it possible to greatly decrease the friction in a nanometer order.

A waterproof member includes a laminated body including a second silicon layer and a second silicon oxide layer, and a through hole that is provided in the laminated body, prevents passing of liquid, and allows passing of gas, the through hole includes a first through hole that passes through the second silicon layer, and a second through hole passing through the second silicon oxide layer and communicating with the first through hole, and a width of the second through hole is smaller than a width of the first through hole.

Gas sensor, comprising: a substrate of semiconductor material; a first working electrode on the substrate; a second working electrode on the substrate, at a distance from the first working electrode; an interconnection layer extending in electrical contact with the first and the second working electrode, configured to change its conductivity when reacting with gas species to be detected. The interconnection layer is of titanium oxide, has a porosity between 40% and 60% in volume and is formed by a plurality of meso-pores having at least one dimension in the range 6-30 nm connected to nano-pores having at least one respective dimension in the range 1-5 nm.

An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.

A method for fabricating a Microelectromechanical System (MEMS) resonator includes providing a dielectric substrate defining a resonator and depositing a conductive coating having a resistivity of approximately 1 to 50 -cm on that substrate by Atomic Layer Deposition (ALD). A resonator fabricated according to this process includes a dielectric substrate defining a resonator and a conductive coating having a resistivity of approximately 1 to 50 -cm for electrically coupling the resonator to electronics. Another method for fabricating a MEMS resonator includes providing a dielectric substrate defining a resonator, depositing an aluminum oxide film on that substrate by ALD, and depositing a noble metal film on the aluminum oxide film, also by ALD.

A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.