An integrated circuit assembly including a first wafer bonded to a second wafer with an oxide layer, wherein a first surface of the first wafer is bonded to a first surface of the second wafer. The assembly can include a bonding oxide on a second surface of the second wafer, wherein a surface of the bonding oxide is polished. The assembly can further include a shim secured to the bonding oxide on the second surface of the second wafer to reduce bow of the circuit assembly.

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The MEMS substrate comprises a moveable element arranged over a carrier substrate. The epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts overlies the epitaxial layer. A first subset of the plurality of contacts overlies the moveable element. The plurality of contacts respectively has an ohmic contact with the epitaxial layer.

A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.

A method of fabricating suspended beam silicon carbide microelectromechanical (MEMS) structure with low capacitance and good thermal expansion match. A suspended material structure is attached to an anchor material structure that is direct wafer bonded to a substrate. The anchor material structure and the suspended material structure are formed from either a hexagonal single-crystal SiC material, and the anchor material structure is bonded to the substrate while the suspended material structure does not have to be attached to the substrate. The substrate may be a semi-insulating or insulating SiC substrate. The substrate may have an etched recess region on the substrate first surface to facilitate the formation of the movable suspended material structures. The substrate may have patterned electrical electrodes on the substrate first surface, within recesses etched into the substrate.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip including an epitaxial layer overlying a microelectromechanical systems (MEMS) substrate. The method includes bonding a MEMS substrate to a carrier substrate, the MEMS substrate includes monocrystalline silicon. An epitaxial layer is formed over the MEMS substrate, the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts are formed over the epitaxial layer, the plurality of contacts respectively form ohmic contacts with the epitaxial layer.

Methods and apparatus for proving a sensor assembly. Embodiments can include employing a circuit assembly having a first layer bonded to a second layer with an oxide layer, depositing bonding oxide on the second layer of the circuit assembly, and thinning the first layer of the circuit assembly after depositing the bonding oxide. A coating can be applied over at least a portion of the first layer of the circuit assembly after annealing the circuit assembly. After polishing the bonding oxide on the second surface of the second layer of the circuit assembly, a shim can be secured to the bonding oxide on the second surface of the second layer of the circuit assembly to reduce bow of the assembly. Embodiments can provide a sensor useful in focal plane arrays.

Methods and systems are described for improved handling and/or culturing and/or assaying of cells, chemically active beads, or similar materials in microfluidic systems and microfluidic culture arrays.