One disclosed method includes defining an electrical trace on a first substrate; physically coupling an electronic component to the first substrate, wherein a portion of the electrical trace completely encircles the electronic component; overlaying a second substrate onto the first substrate, the overlaying causing the second substrate to completely cover the portion of the electrical trace and the electronic component; electrically coupling an electrical power source to the electrical trace to generate a current in the electrical trace; melting the second substrate using heat generated by the current through the electrical trace; and fusing the second substrate to the first substrate to generate a hermetic seal around the electronic component.

Process for encapsulation of a microelectronic device comprising the following steps in sequence: supply a support substrate comprising a first principal face on which a microelectronic device is placed, a second principal face, and a lateral face, deposit a bonding layer on the first principal face of the substrate, position an encapsulation cover comprising a first principal face, a second principal face, and a lateral face, on the bonding layer, deposit a lateral protection layer on: the lateral face and the periphery of the second principal face of the support substrate, the lateral face and the periphery of the second principal face of the encapsulation cover, the lateral protection layer delimiting a protected zone, thinning of the second principal face of the support substrate and/or the second principal face of the encapsulation cover outside the protected zone.

Process for encapsulation of a microelectronic device comprising the following steps in sequence: supply a support substrate comprising a first principal face on which a microelectronic device is placed, a second principal face, and a lateral face, deposit a bonding layer on the first principal face of the substrate, position an encapsulation cover comprising a first principal face, a second principal face, and a lateral face, on the bonding layer, deposit a lateral protection layer on: the lateral face and the periphery of the second principal face of the support substrate, the lateral face and the periphery of the second principal face of the encapsulation cover, the lateral protection layer delimiting a protected zone, thinning of the second principal face of the support substrate and/or the second principal face of the encapsulation cover outside the protected zone.

A method for manufacturing a micromechanical component including a substrate and a cap connected to the substrate, the cap, together with the substrate, enclosing a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity. An access opening connecting the first cavity to surroundings of the micromechanical component is formed in the substrate or in the cap. The first pressure and/or the first chemical composition is adjusted in the first cavity. The access opening is sealed by introducing energy or heat into an absorbing part of the substrate or of the cap with the aid of a laser. A layer for protecting the sealed access opening is applied to or deposited on or grown on a material area, which transitions into a liquid aggregate state and then transitions into a solid aggregate state and seals the access opening.

A method for manufacturing a micromechanical component including a substrate and a cap, which is connected to the substrate and, together with the substrate, encloses a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity, includes in a first task, an access opening connecting the first cavity to surroundings of the component is formed in the substrate or cap, in a second task, the first pressure and/or the first chemical composition is adjusted in the first cavity, in a third task, the access opening is sealed by introducing energy or heat into an absorbing part of the substrate or cap with a laser, the introduction of the energy or heat occurring by adjusting the extension of the absorbing part and adjusting the absorption strength in the absorbing part to minimize stresses occurring in the substrate or cap.

A method for manufacturing a micromechanical component including a substrate and a cap, which is connected to the substrate and, together with the substrate, encloses a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity, includes in a first task, an access opening connecting the first cavity to surroundings of the component is formed in the substrate or cap, in a second task, the first pressure and/or the first chemical composition is adjusted in the first cavity, in a third task, the access opening is sealed by introducing energy or heat into an absorbing part of the substrate or cap with a laser, the introduction of the energy or heat occurring by adjusting the extension of the absorbing part and adjusting the absorption strength in the absorbing part to minimize stresses occurring in the substrate or cap.

A method for manufacturing a micromechanical component including a substrate and a cap connected to the substrate, the cap, together with the substrate, enclosing a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity. An access opening connecting the first cavity to surroundings of the micromechanical component is formed in the substrate or in the cap. The first pressure and/or the first chemical composition is adjusted in the first cavity. The access opening is sealed by introducing energy or heat into an absorbing part of the substrate or of the cap with the aid of a laser. A layer for protecting the sealed access opening is applied to or deposited on or grown on a material area, which transitions into a liquid aggregate state and then transitions into a solid aggregate state and seals the access opening.