A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.

A thin-film package includes: a substrate; a wiring layer disposed on the substrate; a microelectromechanical systems (MEMS) element disposed on a surface of the substrate; a partition wall disposed on the substrate to surround the MEMS element, and formed of a polymer material; a cap forming a cavity with the substrate and the partition wall; and an external connection electrode connected to the wiring layer. The external connection electrode includes at least one inclined portion disposed on at least one inclined surface formed on any one or any combination of any two or more of the substrate, the partition wall, and the cap.

A method of manufacturing MEMS housings includes: providing glass spacers; providing a window plate; attaching the window plate to the glass spacers; aligning the glass spacers with a device glass plate having MEMS devices thereon; bonding the glass spacers to the device glass plate; and singulating the glass spacers, window plate, and device glass plate to produce the MEMS housings.

A method for forming a hybrid-bonding structure is provided. The method includes forming a first dielectric layer over a first semiconductor substrate. The first semiconductor substrate includes a conductive structure. The method also includes partially removing the first dielectric layer to form a first dielectric dummy pattern, a second dielectric dummy pattern and a third dielectric dummy pattern and an opening through the first dielectric layer. The first dielectric dummy pattern, the second dielectric dummy pattern and the third dielectric dummy pattern are surrounded by the opening. In addition, the method includes forming a first conductive line in the opening. The first conductive line is in contact with the conductive structure.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device including a conductive bonding structure disposed between a substrate and a MEMS substrate. An interconnect structure overlies the substrate. The MEMS substrate overlies the interconnect structure and includes a moveable membrane. A dielectric structure is disposed between the interconnect structure and the MEMS substrate. The conductive bonding structure is sandwiched between the interconnect structure and the MEMS substrate. The conductive bonding structure is spaced laterally between sidewalls of the dielectric structure. The conductive bonding structure, the MEMS substrate, and the interconnect structure at least partially define a cavity. The moveable membrane overlies the cavity and is spaced laterally between sidewalls of the conductive bonding structure.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

A bonded structure is disclosed. The bonded structure includes a first element that has a front side and a back side that is opposite the front side. The first element has a first conductive pad and a first nonconductive field region at the front side of the first element. The bonded structure also includes a second element that has a second conductive pad and a second nonconductive field region at a front side of the second element. The second conductive pad is bonded to the first conductive pad along an interface structure. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The bonded structure further includes an elongate conductive structure that extends from the back side of the first element to the interface structure. The elongate conductive structure provides an effectively closed profile around the integrated device.

A cover glass for a hermetic package includes a sealing material layer on one surface. The sealing material layer satisfies one of the following relationships (1) to (6) between its center line length (L.sub.CL) and average width (W.sub.A): (1) when L.sub.CL is 150 mm or more, W.sub.A is 0.20% or more of L.sub.CL; (2) when L.sub.CL is 100 mm or more and less than 150 mm, W.sub.A is 0.30% or more of L.sub.CL; (3) when L.sub.CL is 75 mm or more and less than 100 mm, W.sub.A is 0.35% or more of L.sub.CL; (4) when L.sub.CL is 50 mm or more and less than 75 mm, W.sub.A is 0.40% or more of L.sub.CL; (5) when L.sub.CL is 25 mm or more and less than 50 mm, W.sub.A is 0.60% or more of L.sub.CL; and (6) when L.sub.CL is less than 25 mm, W.sub.A is 0.90% or more of L.sub.CL.

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.

A Microelectromechanical systems (MEMS) structure comprises a MEMS wafer. A MEMS wafer includes a handle wafer with cavities bonded to a device wafer through a dielectric layer disposed between the handle and device wafers. The MEMS wafer also includes a moveable portion of the device wafer suspended over a cavity in the handle wafer. Four methods are described to create two or more enclosures having multiple gas pressure or compositions on a single substrate including, each enclosure containing a moveable portion. The methods include: A. Forming a secondary sealed enclosure, B. Creating multiple ambient enclosures during wafer bonding, C. Creating and breaching an internal gas reservoir, and D. Forming and subsequently sealing a controlled leak/breach into the enclosure.