An electronic device with stud bumps is disclosed. In an embodiment an electronic device includes a carrier board having an upper surface and an electronic chip mounted on the upper surface, the electronic chip having a mounting side facing the upper surface of the carrier board, a top side facing away from the upper surface, and sidewalls connecting the mounting side to the top side, wherein the electronic chip has equal to or less than 5 stud bumps per square millimeter of a base area of the mounting side, wherein the carrier board has at least one recess in the upper surface, and wherein at least one of the stud bumps reaches into the recess.

A method for producing a micromechanical pressure sensor. The method includes: providing a MEMS wafer having a silicon substrate and a first cavity developed therein underneath a sensor diaphragm; providing a second wafer; bonding the MEMS wafer to the second wafer; and exposing a sensor core from the rear side; a second cavity being formed in the process between the sensor core and the surface of the silicon substrate, and the second cavity being developed with the aid of an etching process which is carried out using etching parameters that are modified in a defined manner.

Described herein are nanopore devices as well as methods for assembling a nanopore device including one or more nanopores that can be used to detect molecules such as nucleic acids, amino acids (proteins), and the like. Specifically, a nanopore device includes an insulating layer that reduces electrical noise and thereby improves the sensing resolution of the one or more nanopores integrated within the nanopore device.

A method for manufacturing a protective wafer including a frame wafer and an optical window, and to a method for manufacturing a micromechanical device including such a protective wafer having an inclined optical window. Also described are a protective wafer including a frame wafer and an optical window, and a micromechanical device including a MEMS wafer and such a protective wafer, which delimit a cavity, the protective wafer including an inclined optical window.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A device and method of forming the device that includes a first substrate having a cavity on a bottom surface of the first substrate and MEMS components formed on the first substrate and in the cavity; a second substrate having an upper surface; a first metal bond that extends around a perimeter of the cavity and forming a first connection between the bottom surface of first substrate and the upper surface of the second substrate; a second metal bond that extends around a perimeter of the first metal bond and spaced from the first metal bond, the second metal bond forming a second connection between the bottom surface of the first substrate and the upper surface of the second substrate; where the MEMS components are hermetically sealed between the first and second substrates. A getter agent can be between the first and second metal bonds.

MEMS-based sensors can experience undesirable signal frequencies caused by vibrations, shocks, and accelerations, among other phenomena. A microisolation system can isolate individual MEMS-based sensors from undesirable signal frequencies and shocks. An embodiment of a system for microisolation of a MEMS-based sensor can include an isolation platform connected to one or more folded springs. Another embodiment of a system for microisolation can include an isolation platform and/or a frame connected to a mesh damping mechanism. In at least one embodiment, a mesh damping mechanism can be a microfibrous metal mesh damper. In one or more embodiments, a system for microisolation can include an isolation platform connected to one or more L-shaped springs, and a thickness of the one or more L-shaped springs can be less than a thickness of the isolation platform.

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

A method for bonding wafers eutectically, including the steps: (a) providing a first wafer having a first bonding layer and a second wafer having a second bonding layer and a spacer; (b) bringing the first wafer in juxtaposition with the second wafer, the spacer resting against the first bonding layer; (c) pressing the first wafer and the second wafer together, until the first bonding layer and the second bonding layer abut, the spacer penetrating the first bonding layer; (d) bonding the first wafer to the second wafer eutectically, by forming a eutectic alloy of at least parts of the first bonding layer and the second bonding layer. Also described is a eutectically bonded wafer composite and a micromechanical device having such a eutectically bonded wafer composite.

A MEMS device that includes a lower substrate having an element region on a surface thereof; an upper substrate opposed to the lower substrate; and a bonding section that bonds the lower substrate and the upper substrate to each other around the periphery of the element region. The bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a side closer to the element region to a side farther from the element region. At least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component, and the second region contains a eutectic alloy of the first component and the second component.