An improved wafer bonding method applying at least one prebonding element that deflects in the out-of-plane direction.

A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Materials and methods of making have been developed for mass production of thermoplastic microfluidic chips. An elastomer diaphragm with a stress relieving feature can be used in microfluidic valves, pump diaphragms, and diaphragm micropumps. An optimized pump chamber design for complete fluid displacement and chamber geometry are provided. Microfluidic pressure regulators use a pneumatically actuated elastic membrane in a back-pressure regulator configuration. Microfluidic accumulators store pressurized fluid in a microfluidic chip. Removable caps for cell culture and a quick release top are described. Methods to incorporate hydrogels and ECM scaffolds have been developed. Electro pneumatic manifolds connect and control of multiple microfluidic devices vertically or on a rotary mechanism.

A method including fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a hardmask on a second side of the device wafer, wherein the second side is planar. An etch stop layer is deposited over the hardmask and an exposed portion of the second side of the device wafer. A dielectric layer is formed over the etch stop layer. A via is formed within the dielectric layer. The via is filled with conductive material. A eutectic bond layer is formed over the conductive material. Portions of the dielectric layer uncovered by the eutectic bond layer is etched to expose the etch stop layer. The exposed portions of the etch stop layer is etched. A micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.

A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method comprises forming a MEMS layer, wherein the forming comprises fusion bonding a handle layer with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

The integrated CMOS-MEMS device includes a CMOS structure, a cap structure, and a MEMS structure. The CMOS structure, fabricated on a first substrate, includes at least one conducting layer. The cap structure, including vias passing through the cap structure, has an isolation layer deposited on its first side and has a conductive routing layer deposited on its second side. The MEMS structure is deposited between the first substrate and the cap structure. The integrated CMOS-MEMS device also includes a conductive connector that passes through one of the vias and through an opening in the isolation layer on the cap structure. The conductive connector conductively connects a conductive path in the conductive routing layer on the cap structure with the at least one conducting layer of the CMOS structure.

A fluidic device includes a fluidic layer, a capture material, and an electronics layer, the fluidic layer includes a main channel and a pair of sample channels fluidly coupled to the main channel. The pair of sample channels is configured to receive and introduce a sample material into the device. The sample material includes an analyte. The capture material is positioned in a portion of the main channel that is spaced from the pair of sample channels. The capture material has a three-dimensional matrix of receptors therein configured to bond with the analyte. The capture material has a length that is associated with a dynamic range of the fluidic device and a cross-sectional area that is associated with a sensitivity of the fluidic device. The electronics layer includes electrodes configured to measure an electrical resistance through a portion of the capture material.

A sensor includes a sensor substrate, and an upper lid substrate joined to an upper surface of the sensor substrate. The sensor substrate includes a fixed part, a deformable beam connected to the fixed part, and a weight connected to the beam. The weight is movable relative to the fixed part. The upper lid substrate includes a first part containing silicon and a second part joined to the first part and containing glass. The first part includes a projection protruding toward the sensor substrate relative to the second part. The sensor has high accuracy or high reliability.

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.