A microfluidic device includes a flow channel disposed in a glass-based substrate; and a cover bonded to the glass-based substrate and at least partially covering the flow channel, such that the cover has a thickness of at most 200 μm.

A bonded structure is disclosed. The bonded structure includes a first element and a second element that is bonded to the first element along a bonding interface. The bonding interface has an elongate conductive interface feature and a nonconductive interface feature. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The elongate conductive interface feature has a recess through a portion of a thickness of the elongate conductive interface feature. A portion of the nonconductive interface feature is disposed in the recess.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

Integrated circuit substrates having through silicon vias (TSVs) are described. The TSVs are vias extending through the silicon substrate in which the integrated circuitry is formed. The TSVs may be formed prior to formation of the integrated circuitry on the integrated circuit substrate, allowing the use of via materials which can be fabricated at relatively small sizes. The integrated circuit substrates may be bonded with a substrate having a microelectromechanical systems (MEMS) device. In some such situations, the circuitry of the integrated circuit substrate may face away from the MEMS substrate since the TSVs may provide electrical connection from the circuitry side of the integrated circuit substrate to the MEMS device.

A MEMS resonator comprising a baseplate wafer; a piezoelectric HF-VHF resonator that comprises a monolithic piezoelectric member having at least two separate spring piezoelectric support members integrally extending therefrom, each spring piezoelectric support member having at least a rounded corner; said piezoelectric resonator being attached to the baseplate wafer by said support members; wherein said monolithic piezoelectric member comprises first and second main surfaces joined by side edges; at least one of said side edges forming an angle of between 90 and 105 degrees with one of the first and second main surfaces.

A multi-layer sealing film for high seal yield is provided. In some embodiments, a substrate comprises a vent opening extending through the substrate, from an upper side of the substrate to a lower side of the substrate. The upper side of the substrate has a first pressure, and the lower side of the substrate has a second pressure different than the first pressure. The multi-layer sealing film covers and seals the vent opening to prevent the first pressure from equalizing with the second pressure through the vent opening. Further, the multi-layer sealing film comprises a pair of metal layers and a barrier layer sandwiched between metal layers. Also provided is a microelectromechanical systems (MEMS) package comprising the multilayer sealing film, and a method for manufacturing the multi-layer sealing film.

A silicon substrate having a first silicon substrate having a first surface with a cavity and a second surface opposite the first surface; a first silicon oxide film having a thickness dl on the first surface; a second silicon oxide film having a thickness d2 on a bottom of the cavity; and a third silicon oxide film having a thickness d3 on the second surface, where d1≤d3 and d1<d2, or d3<d1 and d2<d1.

For manufacturing an optical microelectromechanical device, a first wafer of semiconductor material having a first surface and a second surface is machined to form a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements which extend between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. A second wafer is machined separately to form a chamber delimited by a bottom wall having a through opening. The second wafer is bonded to the first surface of the first wafer in such a way that the chamber overlies the actuation structure and the through opening is aligned to the suspended mirror structure. Furthermore, a third wafer is bonded to the second surface of the first wafer to form a composite wafer device. The composite wafer device is then diced to form an optical microelectromechanical device.

A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.