A method for forming a packaged electronic die includes forming a plurality of bonding pads on a device wafer. A photoresist layer is deposited over the device wafer and is patterned so as to form a photoresist frame that completely surrounds a device formed on the device wafer. Conductive balls are deposited over the bonding pads. The wafer is cut to form the electronic die and the electronic die is placed over the substrate. The conductive balls are heated and compressed, moving the electronic die closer to the substrate such that the photoresist frame is in direct contact with the substrate or with a landing pad formed on the substrate. Encapsulant material is deposited such that the encapsulant material covers the electronic die and the substrate. The encapsulant material is cured so as to encapsulate the electronic die. The substrate is cut to separate the packaged electronic die.

A method of forming a bond between substrates and manipulating the bond comprises: emitting a first laser energy onto a strip of an absorption material disposed between a first substrate and a second substrate until the strip diffuses into the first substrate and the second substrate resulting in workpiece with a bond between the first substrate and the second substrate; emitting a second laser energy through the workpiece at the bond to create a fault line through the bond, the first substrate, and the second substrate, the second laser energy provided by an approximated Bessel beam, the approximated Bessel beam incident upon the bond having a diameter that is greater than a width of the bond; and repeating emitting the second laser energy step along a length of the bond to create a series of fault lines through the bond, the series of fault lines forming a contour.

The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.

A hermetically sealed package for thermal encapsulation of a functional area includes: a base substrate; a cover substrate, the base substrate together with the cover substrate forming at least part of the package or forming the package, at least one of the base substrate or the cover substrate being in the form of a thermal insulator; at least one functional area hermetically sealed by the package, heat can be generated inside the at least one functional area of the package; and at least one laser bonding line hermetically joining the base substrate and the cover substrate to one another. The at least one laser bonding line has a height perpendicular to its bonding plane.

A method for manufacturing a MEMS sensor. The method includes: providing a substrate, applying a support layer onto a back side of the substrate, forming at least one cavity in the substrate in such a way that an access to the back side from the front side is formed, introducing a MEMS structure into the at least one cavity, and fixing the MEMS structure on the support layer.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, where the method includes forming an interconnect structure over a first substrate. A dielectric structure is formed over the interconnect structure. The dielectric structure comprises opposing sidewalls defining an opening. A conductive bonding structure is formed on a second substrate. A bonding process is performed to bond the conductive bonding structure to the interconnect structure. The conductive bonding structure is disposed in the opening. The bonding process defines a first cavity between inner opposing sidewalls of the conductive bonding structure and a second cavity between the conducive bonding structure and the opposing sidewalls of the dielectric structure.

An improved wafer bonding method applying at least one prebonding element that deflects in the out-of-plane direction.

A method for forming a packaged electronic die includes forming a plurality of bonding pads on a device wafer. A photoresist layer is deposited over the device wafer and is patterned so as to form a photoresist frame that completely surrounds a device formed on the device wafer. Conductive balls are deposited over the bonding pads. The wafer is cut to form the electronic die and the electronic die is placed over the substrate. The conductive balls are heated and compressed, moving the electronic die closer to the substrate such that the photoresist frame is in direct contact with the substrate or with a landing pad formed on the substrate. Encapsulant material is deposited such that the encapsulant material covers the electronic die and the substrate. The encapsulant material is cured so as to encapsulate the electronic die. The substrate is cut to separate the packaged electronic die.

A process for manufacturing a micro-fluidic device, the device including a substrate made of thermoplastic polymer having a face called the upper face and a first micro-fluidic circuit that includes at least one aperture that opens onto the upper face, and a component bearing pads arranged to become anchored in the substrate on the periphery of the aperture, the process including the following steps: heating so that the anchoring pads of the component reach a temperature at least equal to the glass-transition temperature of the substrate; fastening the component to the substrate by embedding then anchoring its pads in the substrate.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device including a conductive bonding structure disposed between a substrate and a MEMS substrate. An interconnect structure overlies the substrate. The MEMS substrate overlies the interconnect structure and includes a moveable membrane. A dielectric structure is disposed between the interconnect structure and the MEMS substrate. The conductive bonding structure is sandwiched between the interconnect structure and the MEMS substrate. The conductive bonding structure is spaced laterally between sidewalls of the dielectric structure. The conductive bonding structure, the MEMS substrate, and the interconnect structure at least partially define a cavity. The moveable membrane overlies the cavity and is spaced laterally between sidewalls of the conductive bonding structure.