The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.

The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

Described herein is a ruggedized wafer level microelectromechanical (MEMS) force sensor including a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (CMOS) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

In one embodiment, a ruggedized wafer level microelectromechanical (MEMS) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (CMOS) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

A gas sensor, a method of manufacturing a gas sensor, a method for fabricating a micro electro-mechanical system (MEMS) die for a heater or thermopile, and a micro electro-mechanical system (MEMS) die for a heater or thermopile. The gas sensor comprises a first micro electro-mechanical system (MEMS) die comprising a light source; a second MEMS die comprising a light detector; a sample chamber disposes in an optical path between the light source and the light detector; and a holder substrate; wherein the first and second MEMS dies are disposed on the holder substrate in a vertical orientation relative to the holder.

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.