Described herein is a ruggedized wafer level microelectromechanical (MEMS) force sensor including a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (CMOS) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

In one embodiment, a ruggedized wafer level microelectromechanical (MEMS) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (CMOS) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

A method includes forming a mask that defines a masked area and an unmasked area on a front side of a substrate, and implanting a buried layer corresponding to the unmasked area on the front side of the substrate. The method also includes forming an epitaxial layer having a back side on the front side of the substrate and on a front side of the buried layer, and creating an opening into a back side of the substrate up to a back side of the epitaxial layer and a back side of the one or portions of the buried layer.

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

A method for forming a microelectromechanical systems (MEMS) device may include performing a first silicon-on-nothing process to form a first cavity in a substrate. The method may include depositing an epitaxial layer on a surface of the substrate. The method may include performing a second silicon-on-nothing process to form a second cavity in the epitaxial layer. The method may include exposing the first cavity and the second cavity by removing a portion of the substrate and the epitaxial layer.

A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

A pressure sensor has a substrate having a diaphragm, a cavity portion that is positioned on one side of the diaphragm, and a ceiling portion that is disposed opposite to the diaphragm via the cavity portion, and unevenness is formed on a surface of the substrate facing the cavity portion. In addition, the unevenness has a plurality of recessed portions.

A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

A MEMS audio device includes a first substrate having a first surface, a cavity, and a first vent hole formed through the first substrate, a device layer disposed upon the first substrate comprising a semiconductor material sandwiched between a first and second oxides, wherein a portion of the semiconductor material is substantially free of oxide, wherein the first oxide is disposed against the first surface, and wherein the device layer comprises first contacts, a substrate disposed upon the device layer, including a first vent hole formed through the second substrate, and second electrical contacts coupled to the first electrical contacts, wherein the portion of the semiconductor material forms a diaphragm for the MEMS audio device and wherein the diaphragm is configured to move within the first cavity.