Provided is an exhaust gas treatment apparatus that treats exhaust gas generated from semiconductor process and directed to a vacuum pump. Exhaust gas treatment apparatus includes a plasma generating unit for generating plasma, a reaction chamber in which perfluoride is decomposed by the plasma to generate a decomposition gas, and gas supplying unit for supplying the decomposition gas from the reaction chamber to a processing chamber in which the exhaust gas from the semiconductor process is introduced and treated exhaust gas is discharged to the vacuum pump. Decomposition gas reacts with the exhaust gas in the processing chamber to suppress generation of salt in solid state by a component of the exhaust gas.

As an organic iodine remover that removes organic iodine in a containment vessel of a nuclear reactor, an organic agent (for example, an ionic liquid, an interfacial active agent, a quaternary salt, or a phase transfer catalyst) having a function of dissolving and decomposing the organic iodine and retaining iodine is used. The organic iodine remover is a substance composed of a cation and an anion. The organic iodine remover is, in particular, an organic iodine remover in which, in a structure of the cation of the organic agent, carbon or oxygen is bonded to, via a single bond, to a phosphorus element, a sulfur element or a nitrogen element, the number of carbon chains is 2 or more, and an anionic structure is configured with a substance with high nucleophilicity. By using such an organic agent, the organic iodine is removed with an efficiency of 99% or more.

As an organic iodine remover that removes organic iodine in a containment vessel of a nuclear reactor, an organic agent (for example, an ionic liquid, an interfacial active agent, a quaternary salt, or a phase transfer catalyst) having a function of dissolving and decomposing the organic iodine and retaining iodine is used. The organic iodine remover is a substance composed of a cation and an anion. The organic iodine remover is, in particular, an organic iodine remover in which, in a structure of the cation of the organic agent, carbon or oxygen is bonded to, via a single bond, to a phosphorus element, a sulfur element or a nitrogen element, the number of carbon chains is 2 or more, and an anionic structure is configured with a substance with high nucleophilicity. By using such an organic agent, the organic iodine is removed with an efficiency of 99% or more.

To provide an iodine trapping apparatus capable of trapping organic iodine in a wide temperature range with high efficiency. The iodine trapping apparatus includes a first trapping agent 2 capable of trapping organic iodine in a gas in a nuclear power structure main body. The first trapping agent 2 contains a generating and trapping component which generates an iodide ion (I.sup.−) from organic iodine (RI) and traps the generated iodide ion, and a generating component which is different from the generating and trapping component, generates an iodide ion from the organic iodine at least at 100° C. to 130° C., and traps the generated iodide ion in the generating and trapping component.

To provide an iodine trapping apparatus capable of trapping organic iodine in a wide temperature range with high efficiency. The iodine trapping apparatus includes a first trapping agent 2 capable of trapping organic iodine in a gas in a nuclear power structure main body. The first trapping agent 2 contains a generating and trapping component which generates an iodide ion (I.sup.−) from organic iodine (RI) and traps the generated iodide ion, and a generating component which is different from the generating and trapping component, generates an iodide ion from the organic iodine at least at 100° C. to 130° C., and traps the generated iodide ion in the generating and trapping component.

A green resource-based method of thermal mass synergy in waste Integrated circuit board mainly includes carbonization cracking system, crushing and separation system, gasification cracking system and heat value utilization and comprehensive recovery system. Compared with existing techniques, carbonization cracking system can realize the dry distillation cracking of organic matter in waste integrated circuit board which converts carbon, hydrogen and other elements into fuel carbonized cracking gas and cracking oil, the heat from the combustion of the carbonization cracking gas of the invention provides the energy needed for the carbonization cracking to realize self-heating carbonization cracking. Carbonization cracking products are cracked and separated to solve the problems such as hard to break and organic coating metal caused by direct crushing and separation of traditional circuit boards which Improves crushing and separation effect; gasification cracking system achieves the comprehensive utilization of carbon, the gasified cracking gas can be used as a heat source for subsequent valuable metal recovery to further improve the utilization rate of calorific value. The invention has the characteristics of: high heat value utilization rate, low energy consumption, high metal recovery rate, short process recovery of valuable metal and no pollution of flue gas.

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH.sub.4, H.sub.2O, H.sub.2, NF.sub.3, SF.sub.6, F.sub.2, HCl, HF, Cl.sub.2, and HBr. Representative condensing abating reagents include, for example, H.sub.2, H.sub.2O, O.sub.2, N.sub.2, O.sub.3, CO, CO.sub.2, NH.sub.3, N.sub.2O, CH.sub.4, and combinations thereof.

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH.sub.4, H.sub.2O, H.sub.2, NF.sub.3, SF.sub.6, F.sub.2, HCl, HF, Cl.sub.2, and HBr. Representative condensing abating reagents include, for example, H.sub.2, H.sub.2O, O.sub.2, N.sub.2, O.sub.3, CO, CO.sub.2, NH.sub.3, N.sub.2O, CH.sub.4, and combinations thereof.

An abatement apparatus and method are disclosed. The abatement apparatus is for treating an effluent stream from a semiconductor processing tool and comprises: a first abatement device configured to receive the effluent stream and operable to run in an active mode to treat the effluent stream; a second abatement device operable to run in an idle mode; and control logic operable, on receipt of an indication of an alarm condition associated with the first abatement device, to run the second abatement device in the active mode. In this way, a first or primary abatement device is provided which treats the effluent stream and a second or back-up abatement device is provided, should the first abatement device malfunction. However, by only causing the second abatement device to operate in the active mode when the first abatement device malfunctions, significant energy savings can be made.

An abatement apparatus and method are disclosed. The abatement apparatus is for treating an effluent stream from a semiconductor processing tool and comprises: a first abatement device configured to receive the effluent stream and operable to run in an active mode to treat the effluent stream; a second abatement device operable to run in an idle mode; and control logic operable, on receipt of an indication of an alarm condition associated with the first abatement device, to run the second abatement device in the active mode. In this way, a first or primary abatement device is provided which treats the effluent stream and a second or back-up abatement device is provided, should the first abatement device malfunction. However, by only causing the second abatement device to operate in the active mode when the first abatement device malfunctions, significant energy savings can be made.